IS42S16320D-7TL-TR

The IS42S16320D-7TL-TR is a 512 Mbit synchronous DRAM organized as 32M × 16 that implements a pipelined, fully synchronous architecture for high-speed parallel memory applications. Designed for systems requiring a parallel SDRAM interface, this device delivers up to 143 MHz clock operation with programmable burst and latency options to match a range of memory access patterns.

This part is offered in a 54‑pin TSOP‑II package and supports standard SDRAM functions such as auto-refresh, self-refresh and programmable burst lengths for use in embedded and system memory buffering applications where deterministic, clock-referenced operation is required.

Key Features

• Core / Memory Organization  512 Mbit density organized as 32M × 16 with internal banks for concurrent row access and precharge.
• Performance  Rated for 143 MHz clock frequency (‑7 speed grade) with access times down to 5.4 ns and programmable CAS latency (2 or 3 clocks) to tune read timing.
• Burst and Access Modes  Programmable burst length (1, 2, 4, 8, full page) with selectable sequential or interleave burst sequences and support for burst read/write and burst read/single write operations.
• Refresh and Reliability  Supports Auto Refresh and Self Refresh with 8K refresh cycles every 64 ms (commercial specification), providing standard DRAM refresh management.
• Interface  Parallel SDRAM interface with LVTTL signalling and random column address every clock cycle for predictable synchronous operation.
• Power  Supply voltage range specified as 3.0 V to 3.6 V for the device variant provided.
• Package & Temperature  54‑pin TSOP‑II package (0.400", 10.16 mm width) rated for commercial temperature operation from 0°C to +70°C (TA).

Typical Applications

• System memory buffering  Parallel SDRAM buffering for embedded platforms and control systems that require deterministic, clocked memory access.
• Data streaming and frame buffers  High-speed burst read/write capability and programmable burst lengths make the device suitable for short-term data buffering in streaming applications.
• General-purpose embedded SDRAM  Use in designs that need a 512 Mbit synchronous DRAM in a compact 54‑TSOP‑II footprint with standard LVTTL parallel interface.

Unique Advantages

• Configurable timing:  Programmable CAS latency and burst lengths let designers match memory timing to system clocks and access patterns.
• Predictable synchronous operation:  Fully synchronous, clock-referenced inputs and outputs simplify timing design and integration with system clocks.
• Compact, industry-standard package:  54‑pin TSOP‑II (10.16 mm width) provides a board-friendly footprint for space-constrained applications.
• Standard refresh support:  Auto Refresh and Self Refresh with 8K cycles per 64 ms reduce host overhead for DRAM maintenance.
• Wide supply tolerance in specified variant:  Operation over a 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320D-7TL-TR positions itself as a straightforward, clock-synchronous 512 Mbit SDRAM option for engineers needing a parallel memory device with programmable latency and burst control. Its combination of 32M × 16 organization, 143 MHz operation, and standard TSOP‑II packaging makes it suitable for designs that require predictable synchronous performance in a compact form factor.

This device is best suited for designers and procurement teams building embedded systems, buffering subsystems, or other applications that require a serial-free parallel SDRAM solution with standard refresh and burst capabilities. The documented timing, supply, and thermal specifications support reliable integration and long-term use in commercial-temperature designs.

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