IS42S16320D-7BL-TR

The IS42S16320D-7BL-TR is a 512Mbit synchronous DRAM organized as 32M x 16 with a parallel memory interface in a 54-ball TF-BGA package. It uses a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock to deliver high-speed data transfers for commercial-temperature designs.

Designed for systems that require compact, high-performance DRAM, this device supports a 143 MHz clock frequency (‑7 speed grade), 5.4 ns access time, programmable burst operations and flexible refresh modes to match a range of parallel-memory applications.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture; all inputs and outputs are referenced to the positive clock edge for deterministic timing.
• Memory Organization  512 Mbit arranged as 32M × 16 with internal bank architecture to hide row access/precharge and support efficient bank management.
• Performance  Rated clock frequency 143 MHz (‑7 speed grade) with an access time from clock of 5.4 ns; programmable CAS latency options (2 or 3 clocks).
• Burst and Addressing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) with random column address capability every clock cycle.
• Refresh and Self-Refresh  Supports Auto Refresh (CBR) and Self Refresh; 8K refresh cycles every 64 ms to maintain data integrity.
• Interface and Signaling  Parallel LVTTL interface with standard DRAM command set including burst termination by burst stop and precharge commands.
• Power  Supply voltage range of 3.0 V to 3.6 V to support 3.3 V system rails.
• Package and Temperature  54‑ball TF‑BGA (54‑TW‑BGA, 8×13) package in a commercial temperature range of 0°C to 70°C (TA).

Typical Applications

• Commercial embedded systems  Memory for systems requiring a 512 Mbit SDRAM in a compact TF‑BGA package and commercial temperature operation.
• Parallel‑interface memory subsystems  Use as system or expansion DRAM where parallel LVTTL signaling and 32M × 16 organization are required.
• High‑throughput buffering  Burst read/write capability and programmable burst lengths make it suitable for designs needing predictable high-speed data transfers.

Unique Advantages

• Deterministic timing with synchronous pipeline architecture: All I/Os referenced to the rising clock edge provide consistent timing behavior for system designers.
• Flexible burst operation: Programmable burst lengths and sequence modes allow optimization for different access patterns and system throughput needs.
• Efficient bank management: Internal banking hides row access/precharge latency to improve effective memory bandwidth.
• Compact TF‑BGA footprint: 54‑ball TF‑BGA (8×13) package minimizes board area for space‑constrained layouts.
• Commercial temperature rating: Specified 0°C to 70°C operation for standard commercial applications.
• Standard 3.0–3.6 V operation: Compatible with common 3.3 V system power rails.

Why Choose IS42S16320D-7BL-TR?

The IS42S16320D-7BL-TR provides a straightforward, high-speed 512 Mbit SDRAM solution in a compact TF‑BGA package with programmable burst modes, CAS latency selection and robust refresh options. Its fully synchronous pipeline architecture and internal bank structure deliver predictable timing and efficient throughput for designs that require parallel DRAM memory.

This device is well suited for commercial designs that need a 32M × 16 memory organization, 143 MHz operation (‑7 grade), and a compact board footprint. Its combination of performance, flexible burst programming and standard supply voltage support makes it an appropriate choice for engineers specifying parallel SDRAM in space‑constrained systems.

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