IS42S16320D-7BLI-TR

IC DRAM 512MBIT PAR 54TFBGA
Part Description

IC DRAM 512MBIT PAR 54TFBGA

Quantity 915 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S16320D-7BLI-TR – 512Mbit SDRAM, 32M × 16, 54‑TFBGA

The IS42S16320D-7BLI-TR is a 512Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface. It uses a fully synchronous pipeline architecture and is designed for systems that require high-speed, low-latency volatile memory in a compact 54‑TFBGA package.

With support for up to 143 MHz (‑7 timing), programmable burst modes and CAS latency options, this device targets embedded and industrial designs that need predictable, synchronous memory performance across a wide operating temperature range.

Key Features

  • Memory Architecture — 512 Mbit SDRAM organized as 32M × 16 with internal bank architecture to hide row access/precharge.
  • Performance — Designed for 143 MHz operation (‑7 speed grade) with an access time from clock of 5.4 ns (CAS latency = 3).
  • Programmable Burst and CAS — Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable (2 or 3 clocks).
  • Synchronous LVTTL Interface — Fully synchronous operation with all signals referenced to the positive clock edge; LVTTL-compatible signalling.
  • Refresh and Low-Power Options — Supports auto refresh, self refresh and standard 8K refresh cycles every 64 ms for data retention.
  • Power Supply — Operates from 3.0 V to 3.6 V supply range as specified for this device variant.
  • Package and Mounting — 54‑TFBGA (54‑TW‑BGA, 8 × 13) ball grid package optimized for compact board designs.
  • Temperature Range — Specified operating temperature range of −40 °C to +85 °C (TA) for broader environmental compatibility.

Unique Advantages

  • Deterministic synchronous operation: Fully synchronous, pipeline architecture ensures all I/O referenced to clock edges for predictable timing behavior.
  • Flexible performance tuning: Programmable CAS latency and burst options allow designers to optimize throughput and latency trade-offs for different workloads.
  • Compact board footprint: 54‑TFBGA package delivers 512 Mbit density in a small package footprint, aiding space-constrained designs.
  • Industrial temperature support: Rated for −40 °C to +85 °C operation to meet a range of environmental requirements.
  • Standard refresh mechanisms: Auto and self refresh support with 8K/64 ms refresh cycles help maintain data integrity with minimal host intervention.

Why Choose IS42S16320D-7BLI-TR?

The IS42S16320D-7BLI-TR combines a 32M × 16 memory organization, synchronous pipeline architecture and configurable timing features to deliver a balanced solution for designs requiring 512 Mbit of parallel SDRAM. Its 143 MHz speed grade and 5.4 ns access characteristics make it suitable for systems that need predictable, low-latency memory access.

This device is well suited for engineers specifying compact, board-space-conscious DRAM solutions with industrial temperature range and flexible burst/CAS configurability. Its standard refresh and self-refresh capabilities simplify memory management while maintaining data retention.

Request a quote or submit an inquiry to receive pricing and availability information for the IS42S16320D-7BLI-TR.

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