IS42S16320D-6TLI-TR

The IS42S16320D-6TLI-TR is a 512 Mbit synchronous DRAM device organized as 32M × 16. It implements a fully synchronous, pipelined architecture with internal bank management and a parallel memory interface suitable for systems requiring deterministic, clock-referenced DRAM operation.

Designed for commercial and industrial temperature operation, this device delivers high-bandwidth, low-latency memory access (166 MHz clock support, 5.4 ns access time) while offering programmability for burst length, burst sequence and CAS latency to match a variety of legacy and embedded system memory requirements.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture to hide row access/precharge and support pipelined high-speed transfers.
• Memory Organization  512 Mbit capacity organized as 32M × 16 (4 banks), providing a parallel x16 data path for systems that require this configuration.
• Timing and Performance  Supports a clock frequency class including 166 MHz (device -6 speed grade) with an access time from clock of 5.4 ns (CAS latency options supported).
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks for flexibility in system timing.
• Refresh and Power Management  Auto Refresh and Self Refresh supported; 8K refresh cycles every 64 ms (standard refresh behavior for the device).
• Interface and Signaling  LVTTL interface with all signals referenced to the positive clock edge for predictable synchronous operation.
• Power  Supply voltage range VDD/VDDQ = 3.0 V to 3.6 V suitable for 3.3 V-class systems.
• Package and Temperature  54-pin TSOP-II (0.400", 10.16 mm width) package; specified operating temperature range −40°C to +85°C (TA).

Typical Applications

• Industrial embedded systems  Provides 512 Mbit synchronous DRAM capacity with industrial-temperature support for control and data buffering tasks.
• Legacy parallel-interface platforms  Direct-fit memory expansion or replacement in designs that use a parallel x16 SDRAM interface and TSOP-II package footprint.
• Buffering and working memory  Suitable where deterministic, clocked DRAM behavior and programmable burst/CAS settings are required for streaming or temporary data storage.

Unique Advantages

• Predictable synchronous operation: Fully synchronous design with clock-referenced inputs and LVTTL signaling for deterministic timing.
• Flexible performance tuning: Programmable burst lengths, burst sequence and CAS latency allow designers to match memory behavior to system timing and throughput needs.
• Compact TSOP-II package: 54-pin TSOP-II package provides a space-efficient solution for systems constrained by board area.
• Industrial temperature support: Specified operation from −40°C to +85°C enables use in thermally demanding environments.
• 3.0–3.6 V supply range: Compatibility with 3.3 V-class power domains simplifies integration into existing power architectures.

Why Choose IS42S16320D-6TLI-TR?

The IS42S16320D-6TLI-TR combines a 512 Mbit SDRAM density with a fully synchronous, programmable architecture that supports 166 MHz-class operation and low access time (5.4 ns). Its LVTTL interface, programmable burst/CAS options and internal bank management make it well suited to systems that require predictable, high-speed parallel DRAM behavior.

With a 54-pin TSOP-II footprint and an operating range that includes industrial temperatures, this device is appropriate for designers maintaining or upgrading parallel-interface memory subsystems who need a compact, configurable DRAM option with documented timing and refresh characteristics.

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