IS42S16320D-6BLI-TR

The IS42S16320D-6BLI-TR is a 512Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface and a 54-ball TF-BGA package. The device uses a pipeline architecture with all signals referenced to the rising edge of the clock to deliver high-speed, deterministic data transfers.

Designed for systems requiring synchronous parallel DRAM, the IS42S16320D-6BLI-TR supports programmable burst lengths and CAS latencies, operates from 3.0 V to 3.6 V, and is rated for -40 °C to +85 °C, addressing applications with elevated operating temperature requirements.

Key Features

• Memory Core and Organization 512 Mbit SDRAM organized as 32M × 16 with internal banks for hidden row access and precharge.
• Synchronous Pipeline Architecture Fully synchronous operation with all inputs and outputs referenced to the clock’s rising edge for predictable timing and high-speed transfers.
• Performance Supports a 166 MHz clock frequency (part -6 speed grade) with access time as low as 5.4 ns (CAS latency = 3).
• Burst and Latency Options Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks).
• Refresh and Power Modes Auto Refresh and Self Refresh support with 8K refresh cycles every 64 ms to maintain data integrity.
• Interface Parallel memory interface with LVTTL signaling and random column access every clock cycle.
• Voltage and Temperature Supply range 3.0 V to 3.6 V and operating temperature -40 °C to +85 °C (TA) for extended-environment applications.
• Package 54-TF-BGA (54-TW-BGA, 8×13) compact ball-grid package for high-density board designs.

Typical Applications

• Embedded system memory — Use as synchronous parallel DRAM in designs that require 512Mbit capacity with programmable burst and latency options.
• High-speed buffering — Suitable for applications requiring pipelined, low-latency data throughput at 166 MHz clock operation.
• Industrial equipment — Intended for systems that need memory rated for -40 °C to +85 °C operating conditions.

Unique Advantages

• Deterministic synchronous operation: Pipeline architecture and clock-referenced I/O deliver predictable timing for high-speed designs.
• Flexible performance tuning: Programmable burst lengths, burst sequences, and CAS latencies allow designers to match memory behavior to system requirements.
• Robust refresh capability: Auto Refresh and Self Refresh modes with 8K cycles per 64 ms help maintain data integrity in continuous operation.
• Extended temperature range: Rated from -40 °C to +85 °C to support applications operating in wider thermal environments.
• Compact footprint: 54-ball TF-BGA package provides a space-efficient option for board-level memory integration.
• Wide supply tolerance: Operates across a 3.0 V to 3.6 V supply range to accommodate varying system power designs.

Why Choose IC DRAM 512MBIT PAR 54TFBGA?

The IS42S16320D-6BLI-TR delivers a 512Mbit synchronous DRAM solution with pipeline architecture and programmable performance features that suit designs needing predictable, high-speed parallel memory behavior. Its 32M × 16 organization, 166 MHz speed grade, and compact 54-ball TF-BGA package make it applicable for embedded systems, buffering, and industrial applications that require a robust operating temperature range and flexible timing options.

This device is appropriate for engineers and procurement teams specifying a 512Mbit SDRAM with selectable burst and latency settings, industrial-temperature capability, and a compact package for high-density board layouts.

Request a quote or contact sales to obtain pricing, availability, and lead-time information for the IS42S16320D-6BLI-TR.