IS42S16320D-6BL-TR

The IS42S16320D-6BL-TR is a 512 Mbit synchronous DRAM organized as 32M × 16, implemented in a 54-ball thin fine-pitch BGA package. It uses a pipelined, fully synchronous architecture with all signals referenced to the rising clock edge to provide deterministic, high-speed parallel memory access for systems requiring volatile SDRAM storage.

Designed for applications that need 512 Mbit of parallel SDRAM, the device offers programmable burst control, refresh modes and industry-standard timing options while operating from a 3.0 V to 3.6 V supply and within a 0 °C to +70 °C commercial temperature range.

Key Features

• Memory Organization 512 Mbit organized as 32M × 16, providing parallel x16 data width for system memory integration.
• Synchronous SDRAM Architecture Fully synchronous operation with pipeline architecture; all signals referenced to the positive clock edge for predictable timing.
• Performance Clock frequency up to 166 MHz for the -6 speed grade and access time of 5.4 ns (CAS latency dependent).
• Programmable Burst and CAS Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options (2 or 3 clocks) for flexible timing.
• Refresh and Power Modes Supports Auto Refresh, Self Refresh, and standard 8K refresh cycles every 64 ms for maintained data integrity in volatile memory operation.
• Voltage Operates from 3.0 V to 3.6 V supply, compatible with standard 3.3 V system domains.
• Package 54-TFBGA (54-ball TF-BGA, supplier package 54-TW-BGA 8×13) for compact board footprint and BGA mounting.
• Operating Temperature Commercial temperature rating: 0 °C to +70 °C (TA).

Typical Applications

• Parallel system memory Use as a 512 Mbit volatile storage element where a parallel x16 SDRAM interface is required.
• Buffer memory Suitable for designs that need high-throughput burst transfers with programmable burst lengths and sequences.
• Refresh-managed memory subsystems Fits systems requiring standard Auto Refresh and Self Refresh support with 8K refresh cycles per 64 ms.

Unique Advantages

• Deterministic synchronous interface All signals referenced to clock rising edge and pipeline architecture deliver predictable timing behavior for system designers.
• Flexible performance tuning Programmable CAS latency and burst modes allow designers to match timing to system requirements and memory access patterns.
• Compact BGA footprint 54-TFBGA package enables space-efficient board layouts while supporting x16 data width.
• Standard supply range 3.0 V–3.6 V operation aligns with common 3.3 V system power domains.
• Built-in refresh management Auto Refresh and Self Refresh modes with 8K/64 ms refresh cycles reduce external refresh control complexity.

Why Choose IS42S16320D-6BL-TR?

The IS42S16320D-6BL-TR provides a compact, synchronous 512 Mbit DRAM solution with programmable burst control and CAS latency options, making it suitable for designs that require deterministic parallel memory performance. Its 54-ball TF-BGA package and standard 3.0 V–3.6 V supply range simplify integration into embedded and system-level designs that need x16 SDRAM capacity.

Engineers choosing this device benefit from a pipelined SDRAM architecture with refresh and self-refresh support, flexible timing configuration, and commercial temperature operation, offering a balance of performance and integration for applications requiring volatile parallel SDRAM storage.

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