IS42S16320B-7TL

The IS42S16320B-7TL is a 512Mbit synchronous DRAM (SDRAM) device organized as 32M × 16 with a parallel memory interface. It implements a quad-bank, fully synchronous architecture with pipeline operation to support timed, clock-referenced data transfers.

Designed for systems that require a parallel SDRAM solution, the device offers a 143 MHz clock option and low access times to support high-rate burst transfers and predictable memory timing in commercial-temperature applications.

Key Features

• Memory Architecture  512 Mbit SDRAM organized as 32M × 16 in a quad-bank configuration for synchronous, banked operation.
• Performance  Clock frequency up to 143 MHz (–7 speed grade) with an access time of 5.4 ns (CAS latency = 3).
• Burst and Latency Options  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave); programmable CAS latency (2 or 3 clocks).
• Refresh and Self-Maintenance  Auto Refresh (CBR) and Self Refresh supported; refresh rate options include 8K refresh cycles per 16 ms or 64 ms depending on grade.
• Interface and Signaling  Fully synchronous operation with LVTTL interface and all signals referenced to a positive clock edge; supports random column address every clock cycle.
• Power  Operates from a 3.0 V to 3.6 V supply range (device specified at 3.3 V VDD/VDDQ in datasheet excerpts).
• Package  Available in a 54-pin TSOP-II package (0.400" / 10.16 mm width), suitable for PCB-mounted parallel memory implementations.
• Operating Temperature  Commercial operating temperature range: 0°C to +70°C (TA) as specified for this product variant.

Typical Applications

• Parallel SDRAM memory subsystems  Use as a 512 Mbit parallel SDRAM device where organized x16 memory and synchronous banked operation are required.
• High-rate burst buffering  Suitable for systems that use programmable burst lengths and low CAS latency to manage burst read/write transfers.
• Embedded systems with commercial temperature requirements  Fits designs needing a commercial-temperature SDRAM solution with standard TSOP-II packaging.

Unique Advantages

• 512 Mbit density in a compact package: Provides 32M × 16 organization in a 54-pin TSOP-II, enabling moderate density without large package footprints.
• Measured timing performance: 5.4 ns access time at CAS latency = 3 and 143 MHz clock operation for predictable, low-latency data access.
• Flexible burst control: Programmable burst lengths and sequences simplify integration with varying data transfer patterns.
• Standard 3.0–3.6 V supply: Operates within a common 3.3 V supply domain (VDD/VDDQ), easing power-supply design for legacy SDRAM systems.
• Refresh and self-refresh support: Auto Refresh and Self Refresh modes with defined refresh-cycle options help maintain data integrity during standard operation and low-power intervals.
• Commercial temperature rating: Specified for 0°C to +70°C operation to match commercial-grade system requirements.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320B-7TL delivers a documented 512Mbit SDRAM solution with a 32M × 16 organization, synchronous quad-bank architecture, and a 54-pin TSOP-II package for parallel-memory designs. Its 143 MHz operating option, low access time, and programmable burst features make it suitable for applications that require timed, predictable memory transfers within a commercial temperature range.

Manufactured by Integrated Silicon Solution Inc. (ISSI) and supported by a detailed device datasheet, the IS42S16320B-7TL is intended for designers seeking a clear, specification-driven SDRAM component for systems that operate from a 3.0–3.6 V supply and require standard TSOP-II mounting.

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