IS42S16320B-7BL-TR

The IS42S16320B-7BL-TR is a 512Mbit synchronous DRAM (SDRAM) organized as 32M × 16 that delivers high-speed, pipeline-based data transfer for parallel memory subsystems. It implements a quad-bank architecture with a fully synchronous interface referenced to the rising clock edge.

Targeted for commercial-temperature designs, this device supports a nominal 3.3V supply and a parallel LVTTL interface, making it suitable for systems that require a compact 54-ball W‑BGA memory package and programmable burst access.

Key Features

• Core & Architecture  Fully synchronous SDRAM with pipeline architecture and internal bank structure to hide row access/precharge latency.
• Memory Capacity & Organization  512 Mbit total capacity; organized as 32M × 16 (x16 data bus).
• Clocking & Timing  Supports up to 143 MHz clock frequency for the -7 speed grade; access time from clock 5.4 ns (CAS latency = 3).
• Programmable Burst & CAS  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options of 2 or 3 clocks.
• Refresh & Power Management  Supports Auto Refresh (CBR) and Self Refresh. 8K refresh cycles supported with timing options (e.g., 16 ms for A2 grade or 64 ms for Commercial/A1/Industrial grades as specified in the device documentation).
• Voltage & I/O  Nominal VDD/VDDQ = 3.3V with a supply range listed as 3.0 V to 3.6 V; LVTTL compatible interface.
• Package & Mounting  Available in a compact 54‑ball W‑BGA (11×13 mm) package (54‑TFBGA noted in documentation) for board-level memory integration.
• Operating Temperature  Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• Parallel memory subsystems  For designs requiring a 32M × 16 organization and a parallel LVTTL SDRAM interface at 3.3V.
• Board-level DRAM expansion  Compact 54‑ball W‑BGA package enables high-density memory placement on system PCBs.
• Commercial embedded systems  Suited for commercial-temperature equipment needing 512 Mbit of synchronous DRAM capacity with programmable burst modes.

Unique Advantages

• Flexible burst and timing options: Programmable burst lengths and CAS latency settings let designers tune throughput and latency to application needs.
• High-speed synchronous operation: Pipeline architecture and support for 143 MHz operation (‑7 grade) provide low-latency access, with 5.4 ns access time at CL=3.
• Industry-standard voltage support: Nominal 3.3V VDD/VDDQ with an allowed supply range of 3.0–3.6V simplifies integration into common memory power domains.
• Compact package footprint: 54‑ball W‑BGA (11×13) saves board space while providing a x16 interface for wider data paths.
• Built-in refresh management: Auto Refresh and Self Refresh support reduces external refresh handling and helps maintain data integrity across power modes.

Why Choose IS42S16320B-7BL-TR?

The IS42S16320B-7BL-TR combines a 512 Mbit SDRAM capacity with a synchronous, pipeline architecture and programmable timing features that suit parallel 3.3V memory designs. Its x16 organization, selectable burst modes, and compact 54‑ball W‑BGA footprint make it a practical choice when board space and bus width are important design considerations.

This device is appropriate for commercial-temperature systems that require predictable timing (CL = 2 or 3), self‑refresh capability, and standard LVTTL signaling. It is a straightforward option for engineers seeking a 512Mbit parallel SDRAM solution with documented timing and refresh behavior.

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