IS42S16320B-7BLI-TR

The IS42S16320B-7BLI-TR is a 512Mbit synchronous DRAM (SDRAM) organized as 32M × 16, offering high-speed, pipelined data transfer in a compact 54-ball W‑BGA (11×13) package. It provides a parallel memory interface with LVTTL signaling and programmable burst operation to support burst read/write access patterns.

Designed for systems operating from 3.0 V to 3.6 V, the device supports clock frequencies up to 143 MHz (–7 speed grade) with programmable CAS latency and industry-grade operating temperature capability to meet a range of system requirements.

Key Features

• Core Memory  The device is a 512 Mbit SDRAM organized as 32M × 16 (quad-bank architecture) for parallel access and high throughput.
• Performance  Supports clock frequencies up to 143 MHz (–7), with programmable CAS latency of 2 or 3 clocks and an access time from clock of 5.4 ns (CL=3).
• Burst and Access Control  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); burst termination via burst stop or precharge commands.
• Refresh and Self‑Refresh  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycle options documented (timing varies by device grade).
• Interface  Parallel LVTTL-compatible interface with synchronous operation—all signals referenced to the rising clock edge.
• Power  Operates from a 3.0 V to 3.6 V supply range (VDD/VDDQ nominal at 3.3 V as documented in device specifications).
• Package  54-ball W‑BGA (11×13) package for space-efficient board-level integration.
• Temperature Range  Specified operating ambient temperature range of −40 °C to +85 °C (TA) for industrial applications.

Typical Applications

• Memory subsystems  Embedded and board‑level memory banks requiring 512 Mbit synchronous DRAM in a compact BGA footprint.
• High-speed data buffering  Systems that use pipelined SDRAM for burst read/write buffering and rapid random column access.
• Industrial electronics  Designs requiring operation across an extended temperature range (−40 °C to +85 °C) and 3.3 V nominal memory supply.

Unique Advantages

• Programmable burst behavior  Flexible burst lengths and sequence options allow tuning memory transfers to application access patterns and latency requirements.
• High clock-rate support  –7 speed grade operation at up to 143 MHz with low access time (5.4 ns at CL=3) for responsive data access.
• Compact package  54‑ball W‑BGA (11×13) reduces board area while providing a parallel x16 interface for wide-data transfers.
• Robust refresh options  Auto and self‑refresh modes with documented refresh intervals for different device grades to maintain data integrity.
• Wide supply tolerance  3.0 V to 3.6 V supply range accommodates standard 3.3 V memory systems.

Why Choose IS42S16320B-7BLI-TR?

The IS42S16320B-7BLI-TR delivers a practical balance of density, speed, and form factor for designs that require 512 Mbit of synchronous DRAM in a compact W‑BGA package. Its programmable burst modes, LVTTL parallel interface, and support for industry temperature ranges make it suitable for systems needing predictable, high-throughput memory behavior at a 3.3 V supply.

Engineers specifying this device benefit from clear timing and refresh options, selectable CAS latency, and a well‑documented feature set that supports integration into a variety of memory subsystems and embedded applications.

Request a quote or contact sales for pricing, availability, and lead-time information for IS42S16320B-7BLI-TR.