IS42S16320B-7BLI

The IS42S16320B-7BLI is a 512Mbit synchronous DRAM organized as 32M × 16, implementing a pipelined architecture for high-speed data transfer. It is a fully synchronous parallel DRAM with internal banks, programmable burst operation and CAS latency options, designed for systems that require fast, temporary data storage and predictable clock-referenced operation.

This device supports clocked operation up to 143 MHz for the -7 speed grade, an access time of 5.4 ns (CAS latency = 3), and operates from a 3.0 V to 3.6 V supply. It is offered in a compact 54-ball W‑BGA (11 × 13) package and is specified for an extended operating temperature range of -40°C to +85°C (TA).

Key Features

• Core & Architecture  Fully synchronous SDRAM with pipeline architecture and internal bank structure to optimize row access and precharge behavior.
• Memory Organization & Capacity  512 Mbit capacity organized as 32M × 16, providing wide parallel data paths for system memory buffering.
• Performance  Clock frequency options include 166, 143 and 133 MHz (143 MHz for the -7 grade); access time of 5.4 ns at CAS latency = 3.
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave), with selectable CAS latency of 2 or 3 clocks.
• Refresh & Self-Refresh  Auto Refresh (CBR) and Self Refresh supported; refresh options include 8K cycles per 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grades).
• Interface  LVTTL-compatible interface with all signals referenced to the rising edge of the clock for deterministic timing.
• Power & Voltage  Designed for VDD / VDDQ nominal 3.3 V operation with an allowable supply range of 3.0 V to 3.6 V.
• Package & Temperature Range  Available in a 54-ball W‑BGA (11 × 13) package (54-TFBGA) and specified for operation from -40°C to +85°C (TA).

Typical Applications

• Embedded systems memory buffering  Use as high-speed temporary storage in systems that require clocked synchronous access and burst transfers.
• High-throughput data buffers  Suitable for designs needing wide parallel data paths (x16 organization) and programmable burst control for block transfers.
• Industrial electronics  Operation to -40°C supports deployment in industrial temperature environments requiring reliable SDRAM performance.

Unique Advantages

• Deterministic synchronous operation: All signals referenced to the positive clock edge enable predictable timing and simplified system integration.
• Flexible burst control: Programmable burst lengths and sequences plus selectable CAS latency allow tuning for varied access patterns and throughput needs.
• Extended temperature support: Specified operation from -40°C to +85°C (TA) addresses temperature-demanding deployments.
• Compact, board-friendly package: 54-ball W‑BGA (11 × 13) provides a small footprint for space-constrained designs while offering x16 data width.
• Built-in refresh modes: Auto Refresh and Self Refresh with supported refresh-cycle options reduce external refresh management overhead.
• Standard 3.3 V signaling with flexible supply range: VDD/VDDQ nominal 3.3 V with an allowable 3.0 V to 3.6 V window for compatibility with common system power rails.

Why Choose IS42S16320B-7BLI?

The IS42S16320B-7BLI is positioned for designs that require a reliable, 512 Mbit synchronous DRAM with predictable, clock-referenced operation and flexible burst control. Its 32M × 16 organization, pipelined architecture and support for up to 143 MHz (–7) combine to deliver high-speed parallel data buffering in a compact 54-ball W‑BGA package.

This device is suitable for engineers specifying SDRAM for embedded and industrial systems that need selectable CAS latency, programmatic burst behavior, and built-in refresh management, all supported across an extended temperature range. The combination of performance, interface standardization, and package density provides long-term design scalability and integration simplicity.

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