IS42S16320B-75ETLI

The IS42S16320B-75ETLI is a 512Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with internal bank management to support high-speed, deterministic data transfers referenced to a positive clock edge.

Designed for systems operating from 3.0 V to 3.6 V and rated for operation from −40°C to +85°C (TA), this device targets board-level memory expansion where a compact 54-pin TSOP-II package and programmable SDRAM features are required.

Key Features

• Core / Memory Organization — 512 Mbit capacity arranged as 32M × 16 with quad-bank internal architecture for concurrent bank operation.
• SDRAM Timing & Performance — Supports a clock frequency option up to 133 MHz for the -75E device and programmable CAS latency (2 or 3 clocks) with access time as low as 5.5 ns.
• Burst and Sequence Control — Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh & Power Modes — Auto Refresh, Self Refresh and Common Bank Refresh (CBR) support; 8K refresh cycles per refresh period as specified in the device documentation.
• Interface — LVTTL-compatible parallel interface referenced to the rising edge of the clock for synchronous operation.
• Voltage & Power — Operates from 3.0 V to 3.6 V (VDD / VDDQ specified at nominal 3.3 V in device documentation).
• Package — 54-pin TSOP-II (0.400", 10.16 mm width) package suitable for board-level DRAM implementation.
• Operating Temperature — Specified operation from −40°C to +85°C (TA).

Typical Applications

• Memory subsystems — Implement as a 512Mbit synchronous DRAM device in board-level memory arrays requiring 32M × 16 organization and burst-capable transfers.
• Embedded and industrial systems — Use in designs that require operation from 3.0–3.6 V and operation across −40°C to +85°C.
• Board-level DRAM expansion — Fits a 54-pin TSOP-II footprint for x16 DRAM implementations where compact package geometry is required.

Unique Advantages

• Synchronous pipeline architecture: Deterministic, clock-referenced operation simplifies timing integration in synchronous memory subsystems.
• Flexible burst control: Programmable burst lengths and sequential/interleave sequencing enable tailored throughput patterns for different data access models.
• Fast access performance: Access times down to 5.5 ns and support for 133 MHz clocking on the -75E device help meet tight latency requirements.
• Standard 3.3 V memory supply: Nominal 3.3 V operation (supported 3.0–3.6 V range) aligns with common DRAM power domains.
• Compact TSOP-II package: 54-pin TSOP-II (10.16 mm width) enables high-density board integration while preserving x16 data bus implementation.
• Industrial temperature range: Specified operation from −40°C to +85°C for designs requiring extended ambient tolerance.

Why Choose IS42S16320B-75ETLI?

The IS42S16320B-75ETLI combines a 512Mbit SDRAM capacity with a synchronous, pipelined architecture and programmable burst features to address board-level memory needs where predictable timing and flexible data transfer modes are required. Its 32M × 16 organization, LVTTL-compatible parallel interface, and compact 54-pin TSOP-II package make it suitable for systems that require a robust DRAM building block operating at standard 3.3 V memory supply levels.

This device is well suited to engineers and procurement teams specifying memory for designs that demand fast access times (as low as 5.5 ns), support for common SDRAM refresh modes, and operation across −40°C to +85°C. Its combination of performance, package density, and voltage compatibility provides a dependable option for integrating 512Mbit SDRAM into board designs.

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