IS42S16320B-6TLI-TR

The IS42S16320B-6TLI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface. It implements a pipelined, quad-bank architecture with fully synchronous operation—all I/O and control referenced to the rising edge of the clock—for high-speed data transfer in systems that require a 512Mbit SDRAM building block.

Designed for 3.3V memory systems, the device supports commercial and industrial operating ranges and provides programmable timing and burst options to match a variety of system timing and throughput requirements.

Key Features

• Memory Core  The device is a 512 Mbit SDRAM organized as 32M × 16 with quad-bank internal structure and pipelined architecture for high-speed transfers.
• Clock & Performance  Supports clock frequencies up to 166 MHz with programmable CAS latency of 2 or 3 clocks; access time from clock is 5.4 ns for CL=3.
• Burst and Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave). Supports burst read/write and burst read/single write operations with burst termination by burst stop or precharge command.
• Refresh and Self-Maintenance  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles specified over defined intervals per grade.
• Interface  LVTTL-compatible interface with fully synchronous signals referenced to the positive clock edge; random column addressing supported every clock cycle.
• Power  Specified for 3.3V systems with a supply range of 3.0V to 3.6V (VDD / VDDQ = 3.3V typical as documented).
• Package & Mounting  Available in a 54-pin TSOP-II package (0.400" / 10.16mm width) suitable for surface mount PCB assembly.
• Temperature Range  Rated for Industrial operation down to −40°C up to +85°C (TA) as provided in the datasheet options.

Typical Applications

• High-speed parallel memory subsystems  Use as a 512 Mbit SDRAM component where a 32M × 16 organization and synchronous, burst-capable operation are required.
• Systems requiring programmable timing  Suitable for designs that need selectable CAS latency (2 or 3 clocks) and programmable burst lengths to match system timing constraints.
• Temperature-tolerant designs  Applicable in applications that require operation across commercial and industrial temperature ranges (−40°C to +85°C documented).

Unique Advantages

• High clock-rate support: Enables up to 166 MHz operation for higher throughput configurations where CL=3 timing is used.
• Flexible burst control: Programmable burst lengths and sequential/interleave options allow tailoring of transfer patterns to system requirements.
• Programmable latency: Selectable CAS latency (2 or 3) accommodates different system timing trade-offs between latency and maximum clock rate.
• Self-refresh and auto-refresh: Built-in refresh mechanisms reduce external refresh management and support low-power retention modes.
• Industry-standard package: 54-pin TSOP-II footprint simplifies integration into existing PCB designs using standard surface-mount assembly.
• Wide supply range: Operates across 3.0V to 3.6V, matching common 3.3V memory system supplies.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320B-6TLI-TR provides a synchronous, pipelined 512 Mbit SDRAM building block with flexible timing and burst options for systems that require high-speed parallel memory. Its 32M × 16 organization, programmable CAS latency, and support for up to 166 MHz operation make it suitable for designs that need configurable performance and predictable timing behavior.

With LVTTL interface compatibility, self-refresh and auto-refresh support, a standard 54-pin TSOP-II package, and documented commercial/industrial temperature operation, this device addresses designs demanding a robust 3.3V SDRAM solution with configurable timing and burst control.

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