IS42S16320B-6TL-TR

The IS42S16320B-6TL-TR is a 512 Mbit synchronous DRAM organized as 32M × 16, delivered in a 54-pin TSOP-II package. It implements a quad-bank, fully synchronous architecture with all signals referenced to the rising edge of the clock for predictable, high-speed data transfers.

Designed for parallel SDRAM applications, the device supports up to 166 MHz clock operation, programmable burst lengths and sequences, and standard DRAM refresh modes—making it suitable for systems that require compact, low-latency volatile storage in a TSOP footprint.

Key Features

• Core & Memory 512 Mbit DRAM organized as 32M × 16 with quad-bank internal architecture for pipelined access.
• Performance Clock frequency up to 166 MHz (CL = 3) with access time from clock as low as 5.4 ns (CL = 3).
• Timing & Burst Control Programmable CAS latency (2 or 3 clocks) and programmable burst lengths (1, 2, 4, 8, full page) with sequential or interleaved burst sequencing.
• Interface LVTTL-level parallel interface supporting random column address every clock cycle and burst read/write operations.
• Power & Voltage Designed for a 3.0 V to 3.6 V supply range; datasheet specifies VDD/VDDQ = 3.3 V.
• Refresh & Low-Power Modes Auto Refresh and Self Refresh support with 8K refresh cycles per refresh interval options noted in the datasheet.
• Package & Temperature 54-pin TSOP-II (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C.

Typical Applications

• System Memory / Buffering Provides 512 Mbit of parallel SDRAM storage with up to 166 MHz clocking for high-speed buffering and frame or data storage within system memory subsystems.
• High-Speed Data Transfer Fully synchronous operation and programmable burst modes enable predictable, pipelined data transfer for designs requiring low-latency access.
• Compact Board-Level Memory 54-pin TSOP-II footprint allows integration of 512 Mbit DRAM where board space and pin-compatible parallel memory are required.

Unique Advantages

• Deterministic Synchronous Operation: All signals referenced to the positive clock edge simplify timing and integration into synchronous memory buses.
• Configurable Performance: Programmable CAS latency and multiple burst-length options let designers tune latency and throughput to application needs.
• Low Access Latency: Access time from clock down to 5.4 ns (CL = 3) supports low-latency read operations in time-sensitive systems.
• Standard Voltage Compatibility: Operates across a 3.0–3.6 V supply range with 3.3 V VDD/VDDQ specified in the datasheet for compatibility with common 3.3 V memory systems.
• Compact Packaging: 54-pin TSOP-II (10.16 mm width) provides a dense package option for board designs constrained by space.
• Refresh and Low-Power Modes: Supports Auto Refresh and Self Refresh to maintain data integrity and manage power during idle periods.

Why Choose IS42S16320B-6TL-TR?

The IS42S16320B-6TL-TR combines a 512 Mbit synchronous DRAM organization (32M × 16) with programmable timing and burst features to deliver configurable performance in a compact 54-pin TSOP-II package. Its synchronous, quad-bank architecture and LVTTL interface provide predictable timing for systems that require pipelined, parallel memory access.

This device is well suited to designs needing a commercially rated (0°C to +70°C) volatile memory solution with flexible timing (CAS latency 2 or 3), low access latency, and standard 3.0–3.6 V supply compatibility, offering a balance of integration and performance for board-level memory applications.

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