IS42S16320B-6BL-TR

The IS42S16320B-6BL-TR is a 512Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface. It uses a pipelined, quad-bank architecture and operates with a 3.0–3.6 V supply range (VDD/VDDQ typically 3.3 V).

Designed for systems that require high-speed, fully synchronous DRAM, this device supports up to 166 MHz clocking (CAS latency = 3) with programmable burst lengths and sequences, offering flexible performance and memory access control in a compact 54-ball W-BGA (11 × 13) package.

Key Features

• Memory Core  512 Mbit SDRAM organized as 32M × 16; internally configured as quad banks to support overlapping row access and precharge operations.
• Performance  Supports clock frequencies up to 166 MHz (CAS latency = 3) with an access time from clock of 5.4 ns (CAS = 3).
• Programmable Timing & Burst  Programmable CAS latency (2 or 3 clocks), programmable burst lengths (1, 2, 4, 8, full page) and sequential/interleave burst sequences for flexible data transfer patterns.
• Interface  LVTTL-compatible I/O with a parallel memory interface enabling standard SDRAM control and data signaling.
• Refresh & Power Management  Supports Auto Refresh (CBR) and Self Refresh; refresh rates include 8K cycles per 16 ms (A2 grade) or per 64 ms for other grades as specified.
• Supply & Package  Operates from 3.0 V to 3.6 V supply range (VDD/VDDQ typically 3.3 V). Supplied in a 54-ball W-BGA (11 × 13) package (54-TFBGA footprint).
• Temperature Range  Commercial operating temperature range: 0°C to +70°C (TA).

Typical Applications

• System Memory Arrays  Acts as high-speed SDRAM storage in systems that require 512 Mbit parallel DRAM modules.
• Embedded Memory Subsystems  Fits designs needing a compact 54-ball W-BGA memory device with programmable latency and burst capability.
• High-Speed Buffering  Suitable for buffering and temporary data storage where synchronous, pipelined access and programmable burst transfers are required.

Unique Advantages

• High clock-rate support: Up to 166 MHz operation (CAS = 3) provides fast synchronous access for time-critical memory tasks.
• Flexible access control: Programmable CAS latency and burst configurations let designers optimize throughput and latency trade-offs for specific workloads.
• Quad-bank architecture: Internal banking helps hide row access and precharge cycles, improving effective data throughput.
• Standard LVTTL interface: Ensures compatibility with common SDRAM control logic and parallel memory interfaces.
• Compact W-BGA package: 54-ball (11 × 13) W-BGA reduces board footprint while providing reliable soldered connections for dense designs.
• Commercial temperature rating: Specified for 0°C to +70°C operation to match typical commercial electronics requirements.

Why Choose IS42S16320B-6BL-TR?

The IS42S16320B-6BL-TR delivers a straightforward, high-speed 512Mbit SDRAM solution with programmable timing, burst control and a compact 54-ball W-BGA footprint. Its quad-bank, fully synchronous architecture and LVTTL interface make it suitable for designs that require predictable, pipelined memory behavior and flexible data transfer patterns.

This device is well suited to engineers specifying commercial-temperature memory subsystems operating at standard 3.3 V systems who need configurable latency and burst modes to tune performance for their workloads.

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