IS42S16160L-7TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,010 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S16160L-7TLI-TR – 256 Mbit SDRAM (54‑TSOP II)

The IS42S16160L-7TLI-TR is a volatile SDRAM device providing 256 Mbit of memory organized as 16M × 16. The device implements a parallel DRAM architecture in a 54‑lead TSOP II package and exposes an LVTTL memory interface.

Key electrical and timing characteristics include a clock frequency of 143 MHz, an access time of 5.4 ns, and a supply voltage range of 3.0 V to 3.6 V. The device is specified for an operating ambient temperature range of −40 °C to 85 °C.

Key Features

  • Memory Architecture 256 Mbit capacity organized as 16M × 16, providing mid-density DRAM storage in a single device.
  • Technology SDRAM (volatile memory format) designed for synchronous dynamic RAM applications.
  • Performance Rated clock frequency of 143 MHz with an access time of 5.4 ns for timing-sensitive memory operations.
  • Interface LVTTL memory interface for compatibility with LVTTL signaling environments.
  • Power Supply voltage range from 3.0 V to 3.6 V to support standard 3 V SDRAM systems.
  • Package 54‑lead TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level integration.
  • Environmental Range Operating ambient temperature specified from −40 °C to 85 °C.

Unique Advantages

  • Mid-density memory in a compact package: 256 Mbit capacity in a 54‑TSOP II footprint supports space-constrained board designs.
  • Synchronous DRAM timing: 143 MHz clock frequency and 5.4 ns access time enable faster synchronous memory transactions.
  • LVTTL interface compatibility: Integrates with LVTTL signaling domains for straightforward system interfacing.
  • Wide supply tolerance: 3.0 V–3.6 V supply range accommodates common 3 V SDRAM power rails.
  • Extended operating temperature: −40 °C to 85 °C rating supports deployments across a broad ambient temperature range.

Why Choose IS42S16160L-7TLI-TR?

The IS42S16160L-7TLI-TR delivers a combination of 256 Mbit SDRAM capacity, 16M × 16 organization, and synchronous operation at 143 MHz packaged in a 54‑lead TSOP II. Its electrical and thermal specifications — including a 3.0 V–3.6 V supply range and −40 °C to 85 °C operating range — make it suitable for designs requiring a compact, mid-density volatile memory solution with defined timing and interface characteristics.

This device is intended for system-level integration where a standard SDRAM footprint, LVTTL interface, and mid-density memory are required to meet performance and footprint constraints.

Request a quote or contact sales for pricing and availability for the IS42S16160L-7TLI-TR.

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