IS42S16320B-6BL

The IS42S16320B-6BL is a 512Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal bank management to support high-speed data transfers referenced to the rising edge of the clock.

Targeted for commercial-temperature designs, the device operates from 3.0 V to 3.6 V and supports clock rates up to 166 MHz, making it suitable for systems requiring compact, high-performance parallel DRAM in a 54-ball W‑BGA (11×13) package.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipelined architecture and internal quad-bank organization for hiding row access/precharge.
• Memory Organization  512 Mbit capacity arranged as 32M × 16 (x16), providing high-density parallel memory in a single device.
• Performance  Supports clock frequencies up to 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3) and programmable CAS latency (2 or 3 clocks).
• Burst & Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); burst read/write and burst read/single write supported with burst termination options.
• Refresh & Self-Management  Auto Refresh and Self Refresh capability; 8K refresh cycles specification provided in datasheet variants.
• Interface & Signaling  LVTTL-compatible interface with fully synchronous control referenced to a positive clock edge and random column address every clock cycle.
• Supply & Operating Range  Voltage supply range 3.0 V to 3.6 V (VDD, VDDQ referenced as 3.3 V in datasheet) and commercial operating temperature 0°C to +70°C.
• Package  Available in a 54-ball W‑BGA (11×13) package (also referenced in datasheet variants as 54-pin TSOP-II for other options).

Typical Applications

• Parallel memory for embedded systems  Use where a 512Mbit parallel SDRAM (32M × 16) is required for system or application memory at up to 166 MHz.
• Board-level memory expansion  Compact 54-ball W‑BGA (11×13) package enables high-density memory integration on space-constrained PCBs.
• Commercial-temperature designs  Suited for equipment and products operating within the 0°C to +70°C temperature range.

Unique Advantages

• High-speed synchronous operation: 166 MHz clock support and 5.4 ns access time (CAS = 3) for fast, deterministic memory transfers.
• Flexible burst control: Programmable burst lengths and sequences support a range of data-transfer patterns and system timing requirements.
• Compact package option: 54-ball W‑BGA (11×13) package provides a small footprint for dense board designs while delivering x16 data width.
• Power and refresh management: Auto Refresh and Self Refresh functions simplify memory retention and power management in system design.
• Broad voltage tolerance: Operates across a 3.0 V to 3.6 V supply range, aligning with common 3.3 V memory systems.
• Programmable latency: CAS latency options (2 or 3 clocks) let designers trade latency and frequency for target system performance.

Why Choose IS42S16320B-6BL?

The IS42S16320B-6BL combines a 512Mbit SDRAM density with fully synchronous, pipelined operation and a parallel x16 interface to deliver predictable, high-speed memory behavior for commercial-temperature designs. Its support for programmable burst lengths, CAS latency options, and refresh modes provides design flexibility for a range of system timing and power requirements.

This device is appropriate for engineers who need compact, board-level DRAM in a 54-ball W‑BGA (11×13) footprint and who require a 3.0 V–3.6 V supply range with operating frequencies up to 166 MHz. The combination of density, package size, and synchronous features supports scalable memory implementations with clear, verifiable electrical and timing specifications.

Request a quote or submit a pricing and availability inquiry to obtain lead-time and volume pricing for the IS42S16320B-6BL.