IS42S16320B-6BLI

The IS42S16320B-6BLI is a 512Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface. It implements a pipelined, quad-bank architecture to enable high-speed data transfer referenced to the rising edge of the system clock.

Targeted for systems requiring synchronous high-speed memory, the device operates from a 3.0 V to 3.6 V supply range (typical 3.3 V VDD/VDDQ) and supports clock rates up to 166 MHz with industrial temperature operation to -40°C to +85°C.

Key Features

• Core / Architecture  Quad-bank pipelined SDRAM architecture delivering high-speed synchronous transfers with all signals referenced to the positive clock edge.
• Memory Organization & Capacity  512 Mbit total capacity organized as 32M × 16 (x16 data width).
• Performance  Supports clock frequencies up to 166 MHz and a typical access time of 5.4 ns (CAS latency = 3).
• Programmable Burst & CAS  Programmable burst lengths (1, 2, 4, 8, full page), sequential/interleave burst sequence and programmable CAS latency (2 or 3 clocks).
• Refresh & Self-Refresh  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles at either 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade) as specified by device grade.
• Interface  LVTTL-compatible command and control interface with random column addressing every clock cycle and burst read/write capability including burst read/single write.
• Power  Operates from 3.0 V to 3.6 V supply range; documented for 3.3 V VDD and 3.3 V VDDQ in the device specification.
• Package & Mounting  Available in a compact 54-ball W‑BGA (11 × 13) package (54-TFBGA option noted in datasheet) suitable for board-level, high-density mounting.
• Operating Temperature  Specified for operation from -40°C to +85°C (TA).

Typical Applications

• High-speed memory subsystems  Use where synchronous DRAM with up to 166 MHz clocking and pipelined access is required for system memory.
• Industrial temperature systems  Suitable for designs that require operation across -40°C to +85°C.
• Compact board-level designs  The 54-ball W‑BGA (11×13) package supports dense PCB layouts and space-constrained memory implementations.

Unique Advantages

• High-frequency capability  Clocking up to 166 MHz enables faster synchronous transfers compared with lower-speed SDRAM options.
• Low access latency  Typical access time of 5.4 ns at CAS latency = 3 supports responsive read operations.
• Flexible burst control  Programmable burst lengths and sequence modes allow tuning for burst-oriented memory access patterns.
• Robust refresh management  Auto and self-refresh modes with specified 8K refresh cycle intervals provide controlled data retention across grades.
• Industry-grade temperature support  Rated for -40°C to +85°C to meet industrial operating environments.
• Space-efficient package  54-ball W‑BGA (11×13) provides a compact footprint for high-density board designs.

Why Choose IS42S16320B-6BLI?

The IS42S16320B-6BLI delivers a balanced combination of synchronous pipeline performance, configurable burst operation and industrial-temperature operation in a compact 54-ball W‑BGA package. Its 32M × 16 organization and 512 Mbit capacity make it suitable for systems that require parallel SDRAM with predictable timing (programmable CAS latency and defined access times).

This device is appropriate for engineers specifying board-level synchronous DRAM at 3.3 V supply levels who need documented timing (access time, CAS latency options), refresh behavior by grade, and a small package profile for dense layouts.

Request a quote or submit an RFQ to receive availability, pricing, and lead-time information for the IS42S16320B-6BLI.