IS42S16320B-6BLI-TR

The IS42S16320B-6BLI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16 and supplied by ISSI (Integrated Silicon Solution Inc). It uses a pipelined, fully synchronous architecture with all signals referenced to the rising clock edge to support high-speed data transfer in 3.3V-class memory systems.

This device targets systems that require parallel SDRAM with programmable burst operation, selectable CAS latencies, and robust timing performance—delivering sub-10 ns access characteristics and support for internal bank management and self-refresh modes.

Key Features

• Memory Core  512 Mbit SDRAM organized as 32M × 16 with internal quad-bank architecture for efficient row access and precharge hiding.
• Clock and Timing  Rated for 166 MHz operation (–6 speed grade) with an access time from clock of 5.4 ns (CAS latency = 3) and programmable CAS latency options of 2 or 3 clocks.
• Burst and Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (Sequential/Interleave). Supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and Self-Management  Auto Refresh (CBR) and Self Refresh capability; supports standard refresh cycles (e.g., 8K cycles per refresh interval as specified for grades in the datasheet).
• Interface  Fully synchronous operation with LVTTL-compatible interface and parallel memory bus (x16 data width).
• Power  Designed for 3.0 V to 3.6 V supply range (VDD / VDDQ at nominal 3.3 V per device specification).
• Package  54-ball W-BGA package (11 × 13 mm) / 54-TFBGA (supplier package 54-WBGA) optimized for board-level density in x16 configurations.
• Operating Temperature  Specified operating ambient range: −40°C to +85°C (TA).

Typical Applications

• Synchronous 3.3V memory systems  Provides a 512 Mbit, x16 SDRAM option for designs requiring pipeline synchronous DRAM operation.
• High-speed buffering  Burst-capable operation and 166 MHz clocking support short-latency buffering in systems that use parallel SDRAM interfaces.
• Embedded and industrial designs  The −40°C to +85°C operating range and compact W-BGA package suit space-constrained boards operating across extended temperatures.

Unique Advantages

• High-frequency operation: 166 MHz speed grade (–6) supports faster cycle times where available bus timing allows.
• Low access latency: 5.4 ns access time (CAS = 3) enables reduced read latency in pipeline synchronous designs.
• Flexible burst control: Programmable burst lengths and sequences simplify memory access patterns and optimize throughput for sequential or interleaved data streams.
• Integrated refresh and self-refresh: Auto Refresh and Self Refresh modes reduce external refresh management and support low-power idle operation.
• Robust package choice: 54-ball W-BGA (11×13 mm) provides compact footprint and solder-ball interconnect for higher-density board layouts.
• Wide supply tolerance: Operates across a 3.0 V to 3.6 V supply range, matching common 3.3V memory rails.

Why Choose IS42S16320B-6BLI-TR?

The IS42S16320B-6BLI-TR delivers a straightforward, fully synchronous 512 Mbit SDRAM option with programmable latency and burst capabilities for designs that require high-speed parallel memory in a compact W-BGA package. Its combination of 166 MHz timing, sub-6 ns access characteristics, internal banking and refresh features make it suitable for systems that need predictable, pipeline-optimized memory behavior.

This device is well suited to engineers specifying 3.3V-class SDRAM with x16 data width and extended temperature operation, offering a balance of timing flexibility, package density, and power-supply tolerance for long-term deployment in synchronous memory designs.

Request a quote or submit an RFQ to receive pricing, availability, and lead-time information for the IS42S16320B-6BLI-TR.