IS42S16320B-6TL

The IS42S16320B-6TL is a 512Mbit synchronous DRAM device organized as 32M × 16 with a parallel memory interface. It implements a pipeline architecture and fully synchronous operation with all signals referenced to the rising edge of the clock.

This device targets designs that require high-speed parallel SDRAM storage and predictable timing: the -6 speed grade supports a 166 MHz clock and an access time of 5.4 ns (CAS latency = 3).

Key Features

• Core / Memory Architecture 512 Mbit SDRAM organized as 32M × 16 with internal quad-bank architecture for bank interleaving and throughput optimization.
• Performance Clock frequency up to 166 MHz (‑6 speed grade); access time from clock 5.4 ns at CAS latency = 3. Programmable CAS latency options of 2 or 3 clocks.
• Burst and Transfer Control Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence selectable between sequential and interleave. Supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and Self‑Maintenance Auto refresh (CBR) and self refresh supported. Refresh timing: 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial/A1/industrial grades) as specified in the datasheet.
• Voltage and I/O Supply voltage range 3.0 V to 3.6 V (device table lists VDD = VDDQ = 3.3 V). LVTTL-compatible interface signaling as specified in the datasheet.
• Package and Temperature Available in 54-pin TSOP II (0.400", 10.16 mm width). Commercial operating temperature range: 0°C to +70°C.

Unique Advantages

• High-speed data transfer: 166 MHz clock support and 5.4 ns access time (CL = 3) enable fast, synchronous data access for parallel memory systems.
• Flexible burst configuration: Programmable burst lengths and burst sequencing let system designers optimize throughput and latency for varied access patterns.
• Robust refresh options: Auto refresh and self refresh modes with defined refresh cycle parameters provide reliable data retention management.
• Standard TSOP‑II footprint: 54-pin TSOP II package (10.16 mm width) simplifies integration into established board layouts.
• Industry‑standard supply voltage: Operates within a 3.0 V to 3.6 V range with VDD/VDDQ shown as 3.3 V in device documentation, matching common 3.3 V memory systems.

Why Choose IS42S16320B-6TL?

The IS42S16320B-6TL delivers a balanced combination of density, synchronous pipeline architecture and programmable timing features. Its 512 Mbit capacity in a 32M × 16 organization, combined with quad-bank internal structure and programmable burst/CAS options, makes it suitable for designs that require predictable, high‑speed parallel memory behavior.

Manufactured by Integrated Silicon Solution, Inc., this device is specified with clear timing, refresh and voltage parameters (including a 166 MHz clock option and 0°C to +70°C commercial range), enabling straightforward integration into systems that use standard 54-pin TSOP II footprints and 3.3 V memory subsystems.

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