IS42S16320B-75ETL

The IS42S16320B-75ETL is a 512Mbit synchronous DRAM organized as 32M × 16 with a quad-bank, pipelined architecture for high-speed, fully synchronous operation. It is intended for 3.3V synchronous memory systems and supports parallel SDRAM interfaces for designs requiring burst read/write and low-latency access.

Key attributes include a 133 MHz clock rating (for the -75 device timing), programmable CAS latency, internal banking for hidden row access/precharge, and a compact 54-pin TSOP-II package suitable for board-level memory implementations within commercial temperature ranges.

Key Features

• Core Memory Architecture  Fully synchronous SDRAM with pipeline architecture and internal quad-bank structure to improve data throughput and hide row access/precharge.
• Density & Organization  512 Mbit total capacity arranged as 32M × 16.
• Performance  Clock frequency rating up to 133 MHz for the -75 timing option and access times down to 5.5 ns (CAS latency = 2 for -75), enabling high-speed burst transfers.
• Programmable Burst & CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave), with programmable CAS latency (2 or 3 clocks) to match system timing requirements.
• Refresh & Retention  Supports Auto Refresh (CBR) and Self Refresh modes; device-level refresh options include 8K refresh cycles with intervals defined by grade in the datasheet.
• Interface & Signaling  Parallel SDRAM interface with LVTTL signaling for command and data I/O.
• Power  Specified supply range 3.0 V to 3.6 V (datasheet references 3.3 V VDD and VDDQ operation).
• Package  Available in a 54-pin TSOP-II package (0.400", 10.16 mm width) for compact PCB implementations.
• Operating Temperature  Commercial operating range: 0°C to +70°C (TA) as specified for the commercial grade device.

Typical Applications

• 3.3V synchronous memory subsystems  Acts as a 512Mb SDRAM device in systems designed around 3.3V VDD/VDDQ synchronous memory architectures.
• Board-level DRAM for compact form factors  The 54-pin TSOP-II package provides a space-efficient memory option where a 32M × 16 organization is required.
• High-speed buffering and burst transfers  Programmable burst lengths and internal banking make the device suitable for applications requiring burst read/write operations and rapid column access every clock cycle.

Unique Advantages

• Flexible timing configuration: Programmable CAS latency (2 or 3) and multiple burst-length/sequence options allow tuning for system timing and throughput requirements.
• Hidden row access via internal banking: Quad-bank architecture improves effective bandwidth by overlapping row operations with data transfers.
• Robust refresh control: Auto Refresh and Self Refresh modes plus defined refresh cycle parameters provide predictable data retention behavior.
• Compact package footprint: 54-pin TSOP-II packaging (10.16 mm width) enables higher-density board layouts while retaining a parallel SDRAM interface.
• Commercial temperature operation: Specified for 0°C to +70°C to match commercial-grade system requirements.
• Standard signaling: LVTTL-compatible interface simplifies integration with common memory controllers and logic.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320B-75ETL delivers a straightforward 512Mbit SDRAM solution with a 32M × 16 organization, selectable burst and CAS timing, and a compact 54-pin TSOP-II package—making it suitable for systems that require predictable, high-speed synchronous DRAM behavior at commercial temperatures. Backed by Integrated Silicon Solution, Inc. (ISSI) device specifications and datasheet-defined timing, the device is appropriate for designs targeting parallel SDRAM architectures operating at standard 3.3V memory voltages.

Choose this part when you need a documented, configurable SDRAM building block that supports burst transfers, internal banking, and standard LVTTL signaling in a board-friendly package.

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