IS42S16320B-75ETL-TR

The IS42S16320B-75ETL-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with internal bank management to support high-speed data transfers referenced to the rising edge of the system clock.

This device targets system designs that require a commercial-grade, 3.3V-class SDRAM solution with a 54-pin TSOP II package and support for programmable burst operations, CAS latency settings, and standard refresh modes.

Key Features

• Memory Density & Organization — 512 Mbit total capacity organized as 32M × 16, providing a x16 data path for parallel memory systems.
• SDRAM Architecture — Fully synchronous operation with internal quad-bank architecture and all signals referenced to a positive clock edge for predictable timing.
• Performance — Supported clock frequency up to 133 MHz for the -75E speed grade with an access time as low as 5.5 ns (CAS latency = 2).
• Programmable Burst & CAS — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh & Power Modes — Auto Refresh (CBR), Self Refresh, and support for standard 8K refresh cycles (commercial timing as specified in datasheet).
• Interface & Signaling — LVTTL-compatible interface for command and control signalling; random column address every clock cycle.
• Power Supply — Operates from a 3.0 V to 3.6 V supply range (typical 3.3 V operation).
• Package & Temperature — Available in 54-pin TSOP II (0.400", 10.16 mm width); commercial operating temperature range 0°C to +70°C.

Typical Applications

• System Memory Modules — Acts as parallel SDRAM in designs requiring 512Mbit density and a x16 data interface for buffering and working memory.
• Embedded Memory Subsystems — Used where synchronous, pipelined DRAM with programmable burst behavior and CAS latency is required.
• High-Speed Data Buffers — Suitable for applications needing predictable, clock-referenced reads and writes with internal bank management and burst operations.

Unique Advantages

• Predictable Synchronous Timing: All inputs and outputs are referenced to the rising clock edge, enabling repeatable timing and simplified timing analysis.
• Flexible Burst Control: Programmable burst length and sequence options simplify data transfer tuning for different access patterns.
• Speed-Grade Performance: The -75E grade supports 133 MHz operation with CAS latency options to balance throughput and latency.
• Standard 3.3V Operation: Compatible with 3.3V VDD/VDDQ systems while allowing a 3.0 V to 3.6 V supply range for system flexibility.
• Compact TSOP II Packaging: 54-pin TSOP II (10.16 mm width) offers a board-friendly footprint for space-constrained designs.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320B-75ETL-TR combines a 512 Mbit SDRAM density with a fully synchronous, pipelined architecture and configurable burst/CAS settings to address designs that require predictable high-speed parallel memory. Its commercial temperature rating and 54-pin TSOP II package make it suitable for a range of board-level memory implementations that operate at standard 3.3V supply levels.

Choose this device when you need a x16 SDRAM component with programmable performance options and standard refresh modes, delivering a balance of throughput, timing control, and board-level integration for commercial embedded system designs.

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