IS42S16320B-6TLI

The IS42S16320B-6TLI is a 512Mbit synchronous DRAM organized as 32M × 16 with a quad-bank architecture and pipeline operation for high-speed data transfers. It is a fully synchronous, parallel-interface DRAM designed for systems requiring compact, high-throughput volatile memory.

Designed for operation in 3.3V systems (VDD/VDDQ) with a specified supply range of 3.0–3.6V, the device supports clock frequencies up to 166 MHz and is offered in a 54-pin TSOP-II (10.16 mm width) package suitable for commercial and industrial temperature ranges.

Key Features

• Core / Architecture  Quad-bank synchronous DRAM with pipeline architecture for high-speed, predictable data transfers; fully synchronous operation with all signals referenced to the rising clock edge.
• Memory Organization  512 Mbit capacity organized as 32M × 16, providing x16 data width in a single device.
• Performance  Clock frequency options up to 166 MHz and access time as low as 5.4 ns (CAS latency = 3) for low-latency reads.
• Burst and Access Flexibility  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations and burst termination commands.
• CAS and Refresh  Programmable CAS latency (2 or 3 clocks) and auto-refresh/self-refresh support; refresh options include 8K cycles per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) as specified.
• Interface and Signaling  LVTTL-compatible interface with random column addressing every clock cycle for efficient column access patterns.
• Power  Operates with VDD and VDDQ around 3.3V (specified supply range 3.0–3.6V).
• Package and Temperature  Available in a 54-pin TSOP-II package (0.400", 10.16 mm width); operating temperature range includes -40°C to +85°C for industrial use.

Typical Applications

• Embedded systems  Acts as system or external memory where compact, high-speed DRAM is required for application processors and controllers.
• Industrial equipment  Provides volatile buffer and working memory in industrial designs that require operation across extended temperature ranges.
• High-speed buffering  Serves as temporary storage for high-throughput data paths that benefit from programmable burst lengths and low CAS latency.

Unique Advantages

• High-frequency operation: Supports up to 166 MHz clocking for improved data throughput compared to lower-speed DRAM options.
• Flexible access control: Programmable burst lengths, burst sequencing, and CAS latency settings enable tuning for a variety of memory access patterns.
• Low-latency reads: Access time down to 5.4 ns (CAS latency = 3) for faster data retrieval in time-sensitive applications.
• Robust refresh modes: Auto-refresh and self-refresh with selectable refresh intervals support reliable operation across commercial and industrial grades.
• Industry-standard package: 54-pin TSOP-II footprint for straightforward integration into space-constrained board designs.

Why Choose IS42S16320B-6TLI?

The IS42S16320B-6TLI combines a 512Mbit x16 DRAM organization with synchronous, pipeline architecture and flexible burst/CAS options to meet the needs of systems requiring compact, high-performance volatile memory. With support for up to 166 MHz operation and industrial temperature ranges, it is suited to embedded and industrial designs that demand predictable timing and configurable access patterns.

This device is appropriate for engineers specifying parallel SDRAM for system memory, buffering, or temporary data storage, offering a balance of performance, package density, and refresh flexibility that aids system integration and reliability.

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