IS42S16320B-7BL

The IS42S16320B-7BL is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16, provided in a 54-ball W‑BGA (11×13) package. It implements a fully synchronous, pipeline architecture with quad-bank internal organization and all signals referenced to the rising edge of the clock.

Designed for 3.3 V memory systems (device specified at 3.3 V; supply range 3.0 V to 3.6 V), this parallel-interface SDRAM targets applications requiring deterministic, high-speed burst access with programmable burst lengths and CAS latency options.

Key Features

• Core / Architecture  Quad-bank synchronous DRAM with pipeline architecture; all inputs and outputs are referenced to the positive clock edge for deterministic timing.
• Memory Organization  512 Mbit capacity organized as 32M × 16 (x16 data width).
• Speed & Timing  Supports a clock frequency of 143 MHz for the -7 speed grade with an access time from clock of 5.4 ns (CAS latency = 3). CAS latency is programmable (2 or 3 clocks).
• Burst and Access Control  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence modes (Sequential/Interleave). Supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Power Management  Auto Refresh (CBR) and Self Refresh supported; refresh options include 8K refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade) as specified in the device documentation.
• Interface  LVTTL-compatible interface and parallel memory bus for integration into standard SDRAM memory subsystems.
• Power Supply  Device specified for 3.3 V operation and compatible with a supply range of 3.0 V to 3.6 V.
• Package  54-ball W‑BGA (11×13) package (x16 configuration) for compact board-level integration.
• Operating Temperature  Commercial operating range: 0°C to +70°C (TA) as specified for the device variant.

Unique Advantages

• Deterministic synchronous timing: Programmable CAS latency and clock-referenced I/O deliver predictable access timing for tightly timed memory systems.
• High-throughput burst capability: Programmable burst lengths and sequential/interleave modes enable efficient block transfers and reduced controller overhead.
• Power-management features: Auto and self-refresh modes help manage standby power while maintaining data integrity during low-power states.
• Compact package integration: 54-ball W‑BGA (11×13) provides a small PCB footprint for space-constrained board designs.
• Established device specification: Device-level timing and operational parameters (including 143 MHz speed grade and 5.4 ns access time at CL=3) are documented in the manufacturer datasheet for system validation.

Why Choose IS42S16320B-7BL?

The IS42S16320B-7BL offers a 512 Mbit SDRAM option with synchronous, quad-bank architecture and programmable timing features suited for systems that require consistent, high-speed burst transfers on a parallel memory interface. Its documented 143 MHz speed grade and 5.4 ns access time (CL=3) make it appropriate for designs constrained to the commercial temperature range and 3.3 V memory subsystems.

Backed by manufacturer documentation, this device is a practical choice for embedded memory subsystems where compact package footprint, predictable timing, and conventional SDRAM feature sets (burst control, refresh modes, LVTTL interface) are required.

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