IS42S16320B-75ETLI-TR

The IS42S16320B-75ETLI-TR is a 512 Mbit synchronous DRAM organized as 32M × 16 with a parallel SDRAM interface. It uses a fully synchronous, pipelined architecture with internal quad-bank organization and signals referenced to the rising edge of the clock.

Engineered for high-speed buffering and working memory in embedded and industrial designs, this device supports up to 133 MHz clock operation (–75 timing grade) and offers flexible timing and refresh modes to match system performance and retention requirements.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture and pipeline design; all inputs/outputs referenced to positive clock edge.
• Memory Organization  512 Mbit density, organized as 32M × 16 (x16 data bus) suitable for high-density system memory needs.
• Performance  –75 timing grade delivers up to 133 MHz clock frequency with access time ~5.5 ns (CAS latency = 2 timing shown for –75E).
• Programmable Burst and Latency  Programmable burst length (1, 2, 4, 8, full page), sequential/interleave burst sequence, and programmable CAS latency (2 or 3 clocks).
• Refresh and Retention  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with selectable refresh intervals per device grade.
• Interface and Signaling  LVTTL-compatible control signals and random column address every clock cycle for continuous column access.
• Power  Designed for 3.3V VDD/VDDQ operation with a supply range noted as 3.0 V to 3.6 V in device specifications.
• Package and Temperature  Available in 54-pin TSOP-II (0.400", 10.16 mm width) package; specified operating temperature range –40°C to +85°C (TA).

Typical Applications

• Embedded systems  Use as system working memory or frame buffers where a parallel SDRAM interface and 512 Mb density are required.
• Industrial control  Suitable for control and data-logging applications that require extended temperature operation and reliable refresh modes.
• Networking and communications equipment  Acts as packet/buffer memory supporting high-speed, bursty data transfers with programmable burst lengths and CAS latency.

Unique Advantages

• High-density x16 organization: 512 Mbit capacity in a 32M × 16 arrangement enables substantial on-board memory with a single device.
• Timing flexibility: Programmable CAS latency (2 or 3) and selectable burst lengths allow tuning for throughput and latency trade-offs.
• High-speed operation: –75 timing grade supports up to 133 MHz clocking, delivering low access times (approximately 5.5 ns for CAS=2).
• Compact footprint: 54-pin TSOP-II package provides a space-efficient solution for board-level memory integration.
• Robust refresh options: Auto and Self Refresh with 8K refresh cycle support help maintain data integrity across operating conditions.
• Industrial temperature capability: Rated for –40°C to +85°C operation to meet a range of environmental requirements.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320B-75ETLI-TR combines a 512 Mbit SDRAM density with flexible timing, burst sequencing, and refresh options to address demanding buffering and working-memory roles in embedded and industrial designs. Its synchronous, pipelined architecture and LVTTL signaling simplify integration into parallel memory systems.

This device is suited for designers targeting high-speed parallel SDRAM with compact packaging and extended temperature operation, offering configurable performance and retention modes to match system-level requirements.

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