IS42S16160L-7TL-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 760 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S16160L-7TL-TR – IC DRAM 256MBIT PAR 54TSOP II

The IS42S16160L-7TL-TR from Integrated Silicon Solution Inc. is a 256 Mbit synchronous DRAM (SDRAM) memory device organized as 16M × 16. It provides a synchronous dynamic RAM architecture with a 143 MHz clock frequency and an access time of 5.4 ns for applications requiring mid-range SDRAM performance.

This device operates from a 3.0 V to 3.6 V supply and uses LVTTL signaling for its memory interface. It is supplied in a 54-TSOP II (0.400", 10.16 mm width) package and is specified for an ambient operating temperature range of 0 °C to 70 °C.

Key Features

  • Memory Type & Organization Synchronous DRAM (SDRAM) technology with a 16M × 16 organization delivering 256 Mbit total memory capacity.
  • Performance 143 MHz maximum clock frequency and a 5.4 ns access time as specified for read/write timing characteristics.
  • Interface LVTTL memory interface signaling for control and data lines.
  • Voltage Operates from a 3.0 V to 3.6 V supply range, providing compatibility with 3 V-class system rails.
  • Package 54-TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
  • Operating Temperature Specified ambient operating range of 0 °C to 70 °C (TA).
  • Manufacturer Supplied by Integrated Silicon Solution Inc. (ISSI).

Unique Advantages

  • High-density 256 Mbit capacity: Provides substantial memory in a single 16M × 16 device for designs requiring compact DRAM storage.
  • Synchronous operation at 143 MHz: Clocked SDRAM timing supports predictable, synchronous memory access at the specified frequency.
  • Compact 54-TSOP II package: Space-efficient 0.400" (10.16 mm) width package simplifies PCB layout for constrained board areas.
  • Standard LVTTL interface: Compatible with LVTTL signaling conventions for controller integration.
  • Wide supply tolerance: 3.0 V to 3.6 V supply range accommodates common 3 V system power domains.

Why Choose IS42S16160L-7TL-TR?

The IS42S16160L-7TL-TR is positioned as a straightforward SDRAM memory option where a 256 Mbit density, 16M × 16 organization and synchronous operation at up to 143 MHz are required. Its combination of specified access time, LVTTL interface, and standard 54-TSOP II packaging supports designs that need a compact board-level DRAM solution with defined electrical and thermal limits.

This device is suitable for engineering teams and procurement looking for a 3 V-class SDRAM from ISSI with clear operating voltage and temperature specifications, predictable timing figures, and a commonly used TSOP footprint for integration into existing memory layouts.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S16160L-7TL-TR.

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