IS42S16320D-6BLI

The IS42S16320D-6BLI is a 512 Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with internal bank management to support high-speed, burst-oriented memory transfers.

Designed for systems that require low-latency, high-throughput volatile memory, this device delivers predictable timing, programmable burst and CAS behavior, and an extended operating temperature range to support a variety of embedded and industrial designs.

Key Features

• Memory Core  512 Mbit SDRAM organized as 32M × 16 with internal bank architecture to hide row access/precharge and support efficient burst operations.
• Performance  Clocked operation at 166 MHz (‑6 speed grade) with access time of 5.4 ns; programmable CAS latency (2 or 3 clocks) for flexible timing trade-offs.
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential/interleave); supports burst read/write and burst read/single write modes with burst termination commands.
• Refresh and Power Management  Auto Refresh and Self Refresh supported with 8K refresh cycles per 64 ms to maintain data integrity in volatile memory.
• Interface and Signaling  Parallel memory interface with LVTTL signaling; all inputs and outputs referenced to the rising clock edge for synchronous operation.
• Power  VDD/VDDQ supply range 3.0 V to 3.6 V, enabling integration into 3.x V power domains.
• Package and Mounting  54-ball TF-BGA (54-TF-BGA / supplier package 54-TW-BGA, 8×13); surface-mount BGA footprint for compact board-level integration.
• Temperature Range  Industrial operating range from −40 °C to +85 °C (TA) for deployment in temperature-demanding environments.
• Reliability Features  Internal bank precharge and timing programmability reduce access overhead and enable predictable, repeatable memory behavior.

Typical Applications

• Parallel memory subsystems  For designs requiring a 512 Mbit parallel SDRAM device with deterministic synchronous timing and burst transfer capability.
• Industrial and embedded systems  Suitable for embedded controllers and industrial electronics that need operation across −40 °C to +85 °C.
• High-throughput buffering  Acts as buffer memory where programmable burst lengths and low access times (5.4 ns) improve sustained data transfer performance.

Unique Advantages

• Predictable synchronous timing: CAS latency programmability and clock-referenced I/O deliver repeatable, low-latency access patterns.
• Flexible burst control: Programmable burst lengths and sequences let designers optimize throughput and memory access patterns for application workloads.
• Wide operating voltage window: 3.0 V to 3.6 V supply range supports integration with common 3.x V systems.
• Industrial temperature capability: −40 °C to +85 °C rating accommodates temperature-sensitive deployments without added specification changes.
• Compact BGA footprint: 54-ball TF-BGA (8×13) provides a small board area for high-density system designs.

Why Choose IC DRAM 512MBIT PAR 54TFBGA?

The IS42S16320D-6BLI provides a balanced combination of synchronous performance, timing flexibility and industrial temperature tolerance for designs that require a 512 Mbit parallel SDRAM. Its internal bank management, programmable burst/CAS options and LVTTL interface enable deterministic behavior in burst-oriented data paths.

This device is well suited for engineers specifying board-level DRAM where compact packaging, predictable timing (166 MHz / 5.4 ns access), and support for auto/self-refresh are required. The straightforward electrical and timing characteristics make it a practical choice for scalable embedded and industrial memory subsystems.

Request a quote or submit a pricing inquiry to evaluate the IS42S16320D-6BLI for your next design or production program.