IS42S16320D-6TL-TR

The IS42S16320D-6TL-TR is a 512 Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface. It uses a pipelined, fully synchronous architecture and is designed for systems requiring high-speed, volatile SDRAM with programmable burst and latency options.

This device targets designs that require 512 Mbit of parallel SDRAM at commercial temperature ranges, delivering deterministic timing, selectable burst modes and on-chip refresh management for consistent memory operation.

Key Features

• Core Architecture Fully synchronous SDRAM with pipeline architecture; all input/output signals referenced to the positive clock edge.
• Memory Organization 512 Mbit capacity arranged as 32M × 16 with internal bank structure to hide row access/precharge.
• Performance & Timing Rated clock frequency: 166 MHz (‑6 speed grade) with access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Interface & Burst Modes Parallel LVTTL interface supporting programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); random column address every clock cycle.
• Power Supply voltage range: 3.0 V to 3.6 V (VDD / VDDQ per device specification).
• Refresh & Self-Management Auto Refresh and Self Refresh support with 8K refresh cycles every 64 ms; burst termination via burst stop and precharge commands.
• Package & Temperature Available in a 54‑pin TSOP‑II package (0.400", 10.16 mm width); commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Parallel memory expansion — Provides 512 Mbit of synchronous DRAM storage for systems that require a parallel SDRAM interface and predictable timing.
• High‑throughput buffering — Programmable burst lengths and pipelined operation support burst read/write buffering in data‑streaming subsystems.
• Embedded system memory — Commercial‑temperature embedded designs that need a 32M × 16 SDRAM footprint in a 54‑TSOP‑II package.

Unique Advantages

• Deterministic synchronous operation: Fully synchronous design with clock‑referenced I/O ensures repeatable timing and ease of integration into clocked memory systems.
• Selectable latency and burst control: Programmable CAS latency and burst length/sequence let designers tune performance versus access patterns.
• On‑chip refresh management: Auto Refresh and Self Refresh modes with 8K/64 ms refresh cycles reduce external refresh handling.
• Commercial temperature and compact package: 54‑pin TSOP‑II package with 10.16 mm width fits space‑constrained boards while supporting 0°C to +70°C operation.
• Voltage flexibility: Device supports a 3.0 V to 3.6 V supply range to accommodate standard 3.3 V system rails.

Why Choose IS42S16320D-6TL-TR?

The IS42S16320D-6TL-TR delivers a balance of capacity, predictable synchronous performance and flexible burst/latency control in a compact 54‑TSOP‑II package. Its 32M × 16 organization and 166 MHz speed grade provide deterministic access timing (5.4 ns access from clock) suitable for designs that require a parallel SDRAM solution at commercial temperatures.

This device is appropriate for engineers specifying 512 Mbit volatile SDRAM where programmable burst behavior, internal bank management and standard 3.0–3.6 V supply compatibility are required, enabling straightforward integration into systems that depend on consistent SDRAM timing and refresh behavior.

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