IS42S16320D-6TLI

The IS42S16320D-6TLI is a 512 Mbit synchronous DRAM organized as 32M × 16, delivered in a 54-pin TSOP-II package. It implements a fully synchronous pipeline architecture with internal bank management to support high-speed data transfer for board-level memory applications.

Designed for parallel memory interfaces, this device targets systems requiring deterministic SDRAM timing, with support for programmable burst lengths, CAS latency options, and both auto- and self-refresh modes to manage dynamic data retention.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank structure for hidden row access and precharge, referenced to the rising edge of the clock.
• Memory Organization  512 Mbit capacity organized as 32M × 16 with four internal banks.
• Performance  Clock frequency up to 166 MHz (‑6 speed grade) with typical access time of 5.4 ns at CL=3.
• Timing and Refresh  Programmable CAS latency (2 or 3 clocks), programmable burst lengths (1, 2, 4, 8, full page), and 8K refresh cycles every 64 ms; supports auto refresh and self refresh modes.
• Interface  Parallel LVTTL-compatible interface enabling random column address every clock cycle and burst read/write operations with burst termination commands supported.
• Power  Supply voltage range listed as 3.0 V to 3.6 V; datasheet indicates VDD / VDDQ ranges covering this operating window.
• Package  54-pin TSOP-II package (0.400", 10.16 mm width) for compact board-level integration.
• Operating Temperature  Industrial temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Board-level system memory  Used as parallel SDRAM for embedded systems and devices that require synchronized DRAM resources.
• High-speed data buffering  Suitable where pipeline architecture and burst operations are needed to support fast data transfer and temporary storage.
• Industrial electronics  The −40 °C to +85 °C operating range supports deployment in industrial environments requiring extended temperature tolerance.

Unique Advantages

• Deterministic synchronous performance: 166 MHz clock support and 5.4 ns access time provide predictable timing for high-speed designs.
• Flexible data handling: Programmable burst lengths and CAS latency options allow tuning for application-specific throughput and latency trade-offs.
• Built-in refresh management: Auto refresh and self refresh with 8K cycles per 64 ms reduce external refresh logic and simplify system design.
• Compact TSOP-II package: 54-pin TSOP-II (10.16 mm width) enables efficient board-area utilization for dense system layouts.
• Industrial temperature capability: −40 °C to +85 °C rating supports reliable operation across a wide thermal range.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320D-6TLI positions itself as a practical, high-speed SDRAM option for designs that require a synchronous, parallel memory solution with configurable burst and latency behavior. Its 32M × 16 organization, support for burst and CAS programming, and 166 MHz operation provide a balance of capacity and performance for embedded and industrial applications.

With compact 54‑pin TSOP‑II packaging and built-in refresh and self-refresh capabilities, this device simplifies BOM and board integration while supporting extended temperature operation for robust deployments. It is suited to engineers and procurement teams specifying reliable, deterministic SDRAM on a board-level footprint.

If you would like pricing, availability, or lead-time details for the IS42S16320D-6TLI, request a quote or submit an inquiry and our team will respond with the information you need.