IS42S16320D-7TLI

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 1,874 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S16320D-7TLI – IC DRAM 512MBIT PAR 54TSOP II

The IS42S16320D-7TLI is a 512Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface in a 54-pin TSOP-II package. It implements a fully synchronous pipeline architecture with internal bank management to optimize high-speed data transfers.

Designed for systems that require deterministic SDRAM timing and industrial operating range, this device offers a 143 MHz clock option, programmable CAS latency and burst features to match a variety of memory access patterns while operating from a 3.0 V–3.6 V supply.

Key Features

  • Memory Organization: 32M × 16 configuration providing 512 Mbit of volatile SDRAM in a single package.
  • Performance: 143 MHz clock frequency (–7 speed grade) with typical access time of 5.4 ns for fast read access.
  • Programmable Timing and Burst: Programmable CAS latency (2 or 3 clocks) and selectable burst lengths (1, 2, 4, 8, full page) with sequential or interleaved burst sequence options.
  • Synchronous Architecture & Bank Management: Fully synchronous operation referenced to the rising clock edge and internal bank architecture for hiding row access/precharge latency.
  • Refresh and Power Modes: Supports Auto Refresh and Self Refresh with 8K refresh cycles every 64 ms to maintain data integrity.
  • Interface and Signaling: Parallel memory interface with LVTTL-compatible signaling.
  • Power Supply: Operates from 3.0 V to 3.6 V supply.
  • Package and Mounting: 54-pin TSOP-II (0.400", 10.16 mm width) package for surface-mount designs.
  • Operating Temperature: Industrial temperature range of −40°C to +85°C (TA).

Unique Advantages

  • Deterministic synchronous operation: Fully synchronous, clock-referenced design simplifies timing integration with host controllers.
  • Flexible access patterns: Programmable burst lengths and burst sequence options allow tuning for both sequential and random access workloads.
  • Latency control: Selectable CAS latency (2 or 3) enables trade-offs between speed and system timing margins.
  • Robust refresh features: Auto and self-refresh modes with 8K/64 ms support reduce host refresh management and help preserve data across suspend states.
  • Industrial-ready thermal range: Rated for −40°C to +85°C operation to support temperature-demanding deployments.
  • Compact surface-mount package: 54-pin TSOP-II footprint provides a space-efficient memory solution for board-level integration.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320D-7TLI combines a 512 Mbit SDRAM capacity with a 32M × 16 organization, selectable timing modes and burst options to fit designs that require predictable, high-speed parallel memory. Its internal bank architecture and synchronous pipeline help optimize throughput while keeping host timing straightforward.

This part is suited to designs that need a compact TSOP-II packaged SDRAM operating across an industrial temperature range and within a 3.0 V–3.6 V power envelope, providing a straightforward memory building block for systems requiring deterministic SDRAM behavior.

Request a quote or submit a pricing and availability inquiry to receive specific ordering and lead-time information for the IS42S16320D-7TLI.

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