 | | IS42S16160J-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 284 | |
 | | IS42S16160J-7BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 518 | |
 | | IS42S16160J-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 749 | |
 | | IS42S16160J-7BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 663 | |
 | | IS42S16160J-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 51 | |
 | | IS42S16160J-7TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 420 | |
 | | IS42S16160J-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,559 | |
 | | IS42S16160J-7TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 548 | |
 | | IS42S16160J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 323 | |
 | | IS42S16160L-5BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 662 | |
 | | IS42S16160L-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,313 | |
 | | IS42S16160L-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 133 | |
 | | IS42S16160L-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,714 | |
 | | IS42S16160L-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,806 | |
 | | IS42S16160L-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 91 | |
 | | IS42S16160L-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,089 | |
 | | IS42S16160L-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,042 | |
 | | IS42S16160L-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 37 | |
 | | IS42S16160L-7BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,084 | |
 | | IS42S16160L-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 352 | |