IS42S16160J-7TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 850 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160J-7TLI-TR – IC DRAM 256MBIT PAR 54TSOP II

The IS42S16160J-7TLI-TR from ISSI is a 256 Mbit volatile SDRAM device organized as 16M × 16 with a parallel memory interface. It delivers synchronous DRAM performance with a 143 MHz clock frequency and a 5.4 ns access time for working-memory and buffering applications.

Designed for systems requiring a parallel SDRAM solution in a compact package, this device supports a 3.0 V to 3.6 V supply range and an operating ambient temperature range of −40°C to 85°C.

Key Features

  • Memory Core SDRAM technology with a total capacity of 256 Mbit organized as 16M × 16 for 16-bit parallel data paths.
  • Performance Rated clock frequency of 143 MHz and an access time of 5.4 ns to support responsive read/write cycles.
  • Interface & Format Parallel memory interface using standard DRAM signaling and timing.
  • Power Operates from a 3.0 V to 3.6 V supply voltage.
  • Package & Mounting Supplied in a 54-pin TSOP II package (0.400", 10.16 mm width) suitable for surface-mount PCB layouts.
  • Operating Conditions Ambient operating temperature range of −40°C to 85°C; device is volatile memory (data not retained without power).
  • Manufacturer Produced by Integrated Silicon Solution Inc. (ISSI).

Typical Applications

  • Embedded Systems — Serves as working memory or buffer SDRAM in microcontroller- or processor-based designs requiring a 16-bit parallel memory interface.
  • Consumer Electronics — Provides system memory for devices that integrate parallel DRAM for temporary data storage and buffering.
  • Industrial Equipment — Useful in industrial controllers and instrumentation that operate across −40°C to 85°C and need volatile SDRAM storage.

Unique Advantages

  • High-density 256 Mbit capacity: Single-chip 16M × 16 organization simplifies memory budgeting for mid-density applications.
  • Parallel 16-bit architecture: Native 16-bit data path supports designs that require parallel DRAM access without additional bus conversion.
  • Performance-oriented timing: 143 MHz clock rating and 5.4 ns access time provide predictable synchronous DRAM response characteristics.
  • Standard TSOP II package: 54-pin, 0.400" (10.16 mm) TSOP II footprint aligns with common PCB layouts for surface-mount memory components.
  • Robust operating range: 3.0 V–3.6 V supply and −40°C to 85°C ambient rating support a wide set of operating conditions.

Why Choose IS42S16160J-7TLI-TR?

The IS42S16160J-7TLI-TR positions itself as a straightforward parallel SDRAM option offering 256 Mbit density, predictable timing (143 MHz clock, 5.4 ns access), and industry-standard packaging. Its 16M × 16 organization and TSOP II form factor make it suitable for designs that need a compact, parallel memory device operating over a broad supply and temperature range.

This device is appropriate for engineers and procurement teams specifying mid-density SDRAM for embedded, consumer, or industrial designs where a 16-bit parallel interface and known timing characteristics are required.

Request a quote or contact sales to obtain pricing, lead time, and availability for the IS42S16160J-7TLI-TR.

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