IS42S16160L-6BL-TR
| Part Description |
IC DRAM 256MBIT PAR 54TFBGA |
|---|---|
| Quantity | 577 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S16160L-6BL-TR – IC DRAM 256MBIT PAR 54TFBGA
The IS42S16160L-6BL-TR is a 256 Mbit volatile SDRAM device manufactured by Integrated Silicon Solution Inc. It implements a 16M × 16 memory organization and is supplied in a compact 54‑TFBGA (8×8) package.
Designed for applications that require standard SDRAM storage, the device offers a 166 MHz clock frequency, 5.4 ns access time, LVTTL interface signaling, and a 3.0–3.6 V supply range to match compatible system designs.
Key Features
- Memory Core 256 Mbit SDRAM organized as 16M × 16 for straightforward bus mapping and parallel access.
- Performance 166 MHz clock frequency with a 5.4 ns access time to support moderate-speed memory transactions.
- Interface LVTTL memory interface for integration with LVTTL-compatible logic and memory controllers.
- Power Operates from a 3.0–3.6 V supply range.
- Package and Mounting 54‑TFBGA (8×8) package providing a compact footprint for surface-mount PCB assemblies.
- Operating Temperature Specified for operation from 0°C to 70°C (TA).
Typical Applications
- Embedded memory subsystems — Use as SDRAM storage in designs that require 256 Mbit volatile memory with a 16M × 16 organization.
- Electronic equipment — Integration where a 54‑TFBGA package and LVTTL interface are required to meet board space and signaling constraints.
- Prototype and production designs — Suitable for projects needing a defined operating range (0°C to 70°C) and a 3.0–3.6 V supply.
Unique Advantages
- High-density 256 Mbit capacity: Provides substantial SDRAM storage in a single device to simplify memory system design.
- Compact 54‑TFBGA (8×8) package: Reduces PCB footprint while supporting surface-mount assembly.
- Moderate performance envelope: 166 MHz clock and 5.4 ns access time enable responsive memory access for many embedded applications.
- Standard LVTTL interface: Facilitates integration with LVTTL-compatible controllers and logic families.
- Flexible supply range: 3.0–3.6 V operation allows compatibility with common 3 V memory systems.
- Specified commercial temperature range: Rated for operation from 0°C to 70°C for typical commercial environments.
Why Choose IC DRAM 256MBIT PAR 54TFBGA?
The IS42S16160L-6BL-TR balances density, package compactness, and interface simplicity for designs that require a 256 Mbit SDRAM solution. Its 16M × 16 organization, LVTTL signaling, and defined electrical and timing characteristics make it suitable for engineers specifying standard SDRAM memory capacity in constrained board space.
Manufactured by Integrated Silicon Solution Inc., this device is appropriate for customers seeking a proven SDRAM component with clear electrical, timing, and thermal specifications for commercial-temperature designs.
Request a quote or submit an inquiry to obtain current pricing and availability for the IS42S16160L-6BL-TR.
