IS42S16160L-6TL
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 73 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S16160L-6TL – 256 Mbit SDRAM, 54-TSOP II
The IS42S16160L-6TL is a 256 Mbit synchronous DRAM (SDRAM) memory IC manufactured by ISSI (Integrated Silicon Solution Inc). It is organized as 16M × 16 and operates as volatile DRAM for board-level memory expansion where synchronous SDRAM behavior is required.
This device targets applications that require a 256 Mbit SDRAM in a compact 54‑TSOP II package, delivering a 166 MHz clock capability, 5.4 ns access time, and operation from a 3.0 V to 3.6 V supply across a commercial temperature range (0 °C to 70 °C).
Key Features
- Memory Type & Technology Volatile memory implemented as synchronous DRAM (SDRAM) providing standard DRAM functionality.
- Density & Organization 256 Mbit capacity organized as 16M × 16 bits for parallel data paths and predictable memory sizing.
- Performance Supports a 166 MHz clock frequency with a specified access time of 5.4 ns for responsive read/write operations.
- Interface LVTTL memory interface signaling for logic-level compatibility with 3.3 V systems.
- Power Operates from a 3.0 V to 3.6 V supply range, aligning with common 3.3 V system rails.
- Package & Mounting Delivered in a 54-TSOP II package (0.400", 10.16 mm width) suitable for surface-mount board designs.
- Operating Temperature Rated for commercial operation from 0 °C to 70 °C (TA).
Unique Advantages
- High-density memory in a compact footprint: 256 Mbit capacity in a 54‑TSOP II package enables significant on-board storage without large package size.
- Synchronous operation with defined timing: 166 MHz clock and 5.4 ns access time provide consistent synchronous DRAM performance characteristics.
- LVTTL signaling compatibility: Supports LVTTL-level interface for integration with 3.3 V logic environments.
- Standard 3.0–3.6 V supply range: Matches typical 3.3 V system rails for straightforward power integration.
- Commercial temperature rating: Rated 0 °C to 70 °C for use in standard commercial electronic applications.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The IS42S16160L-6TL provides a straightforward, high-density SDRAM option for designs needing 256 Mbit of volatile, synchronous memory in a compact 54‑TSOP II package. Its 16M × 16 organization, 166 MHz clock support, and 5.4 ns access time offer clear, verifiable performance characteristics for system designers.
This device is suitable for projects that require a commercial-temperature SDRAM solution with LVTTL signaling and compatibility with 3.0–3.6 V supplies. It delivers predictable SDRAM behavior and a compact package for board-level memory implementations supported by ISSI manufacturing.
Request a quote or submit a procurement inquiry to evaluate the IS42S16160L-6TL for your design requirements.
