IS42S16160L-6TL-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,585 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S16160L-6TL-TR – IC DRAM 256MBIT PAR 54TSOP II

The IS42S16160L-6TL-TR is a volatile SDRAM device providing 256 Mbit of synchronous DRAM organized as 16M × 16. It delivers synchronous memory operation with a 166 MHz clock and a 5.4 ns access time, designed for board-level memory implementations requiring synchronous DRAM performance.

This device operates from a 3.0 V to 3.6 V supply, uses an LVTTL memory interface, and is supplied in a 54-TSOP II package (0.400", 10.16 mm width), making it suitable for compact PCB footprints with standard TSOP routing.

Key Features

  • Memory Architecture 256 Mbit SDRAM organized as 16M × 16, providing parallel data paths and standard DRAM memory format.
  • Synchronous Performance Operates with a 166 MHz clock and specified 5.4 ns access time for synchronous read/write operations.
  • Voltage and Interface Single supply range of 3.0 V to 3.6 V with an LVTTL memory interface for standard logic-level connectivity.
  • Package 54-TSOP II package (0.400", 10.16 mm width) for compact board-level integration.
  • Operating Temperature Specified operating ambient temperature range of 0°C to 70°C (TA).
  • Memory Type Volatile DRAM memory format intended for systems requiring temporary data storage.

Typical Applications

  • Board-Level Memory Expansion Implement as a 256 Mbit SDRAM device (16M × 16) where additional synchronous DRAM capacity is required on a PCB.
  • Synchronous Memory Subsystems Use in designs that leverage a 166 MHz clock and 5.4 ns access time for synchronous read/write timing.
  • Compact PCB Designs Integrate where a 54-TSOP II package footprint (10.16 mm width) is preferred for space-constrained layouts.

Unique Advantages

  • Defined Performance Envelope 166 MHz clock rate and 5.4 ns access time provide clear timing parameters for system memory timing budgets.
  • Standard Logic Interface LVTTL interface simplifies interfacing with common logic-level controllers and memory buses.
  • Wide Supply Tolerance 3.0 V to 3.6 V supply range supports designs using conventional 3.3 V power rails.
  • Compact Package 54-TSOP II (0.400", 10.16 mm) supports denser board layouts while maintaining standard TSOP routing practices.
  • Clear Thermal Range Specified 0°C to 70°C ambient rating aids selection for temperature-controlled environments.

Why Choose IS42S16160L-6TL-TR?

The IS42S16160L-6TL-TR positions itself as a straightforward 256 Mbit SDRAM option with explicit timing (166 MHz, 5.4 ns) and a 16M × 16 organization, suited for designs that require synchronous DRAM with LVTTL signaling and a compact TSOP footprint. Its 3.0 V–3.6 V supply range and defined operating temperature make it a clear-fit choice for standard electronic assemblies needing board-level volatile memory.

Designers and procurement teams seeking predictable SDRAM performance, standard interface compatibility, and a compact package can leverage this device for scalable memory implementations and streamlined PCB integration.

Request a quote or submit an inquiry to check availability, pricing, and lead times for the IS42S16160L-6TL-TR.

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