IS42S16160L-6TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 264 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S16160L-6TLI-TR – 256Mbit SDRAM, 54-TSOP II

The IS42S16160L-6TLI-TR from ISSI is a 256 Mbit volatile SDRAM organized as 16M × 16. It provides synchronous DRAM storage with an LVTTL interface and is offered in a 54‑pin TSOP II package.

Designed for applications that require mid-density SDRAM, this device delivers a 166 MHz clock capability, a 5.4 ns access time specification, and operates from a 3 V to 3.6 V supply across an ambient range of −40 °C to 85 °C.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 16M × 16, suitable for systems needing mid-density volatile memory.
  • Performance Supports a 166 MHz clock frequency with a specified access time of 5.4 ns for synchronous data transfers.
  • Interface LVTTL memory interface for standard logic-level signaling.
  • Power Operates from a 3 V to 3.6 V supply range, enabling compatibility with common 3 V system rails.
  • Package 54‑pin TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
  • Operating Temperature Specified ambient range of −40 °C to 85 °C for extended temperature operation.

Typical Applications

  • Buffering and Temporary Storage Use as system or application buffers where a 256 Mbit SDRAM is required for transient data storage.
  • Embedded Memory Expansion Adds mid-density volatile memory in designs that support an LVTTL SDRAM interface and a 54‑pin TSOP II footprint.
  • System Memory for Logic Devices Provides synchronous DRAM capacity for controllers or processors that operate within the specified 3 V–3.6 V supply and −40 °C to 85 °C ambient range.

Unique Advantages

  • Verified mid-density capacity: 256 Mbit organized as 16M × 16 for clear sizing decisions in system design.
  • Synchronous performance: 166 MHz clock rating and 5.4 ns access time support deterministic SDRAM timing requirements.
  • Standard logic interface: LVTTL signaling simplifies interfacing to common digital logic domains.
  • Flexible power range: 3 V to 3.6 V operation supports integration with typical 3 V system rails.
  • Compact package: 54‑pin TSOP II (0.400", 10.16 mm) enables dense PCB layouts and surface-mount assembly.
  • Wide temperature operation: −40 °C to 85 °C ambient rating for deployments across commercial and industrial environments.

Why Choose IS42S16160L-6TLI-TR?

The IS42S16160L-6TLI-TR combines a clear mid-density SDRAM specification with synchronous performance, a standard LVTTL interface, and a compact 54‑pin TSOP II package. It is positioned for designs that require deterministic SDRAM behavior at up to 166 MHz clocking while operating from a 3.0 V–3.6 V power rail across −40 °C to 85 °C ambient conditions.

This device is suited to engineers and procurement teams specifying mid-density volatile memory for board-level integration where package footprint, interface compatibility, and temperature range are key selection criteria.

Request a quote or submit an inquiry to obtain pricing and availability for the IS42S16160L-6TLI-TR.

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