IS42S16160L-6BLI-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 936 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S16160L-6BLI-TR – IC DRAM 256MBIT PAR 54TFBGA

The IS42S16160L-6BLI-TR is a 256 Mbit volatile SDRAM memory device in a 54-TFBGA (8x8) package from ISSI (Integrated Silicon Solution Inc). It is organized as 16M x 16 and provides synchronous DRAM storage with a specified clock frequency of 166 MHz and an access time of 5.4 ns.

This device is intended for designs that require moderate-density SDRAM with an LVTTL memory interface, operation across a −40°C to 85°C ambient range, and a supply voltage range of 3.0 V to 3.6 V.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 16M x 16, providing a predictable memory footprint for system designers.
  • Performance Synchronous operation with a clock frequency of 166 MHz and an access time of 5.4 ns for timing-sensitive applications.
  • Interface LVTTL memory interface for compatibility with systems using LVTTL signaling.
  • Power Operates from a 3.0 V to 3.6 V supply range, supporting common 3 V system rails.
  • Package 54-TFBGA package (8x8) for compact board-level integration.
  • Temperature Range Specified operating ambient range of −40°C to 85°C (TA) for use in a broad set of environmental conditions.

Typical Applications

  • Embedded memory expansion Provides 256 Mbit of SDRAM for embedded systems requiring synchronous volatile storage with LVTTL signaling.
  • System buffering Used where intermediate buffering or working memory is needed at clock rates up to 166 MHz.
  • Industrial electronics Suitable for designs that require operation across −40°C to 85°C and a 3.0 V–3.6 V supply range.

Unique Advantages

  • 256 Mbit density in a compact package: Delivers moderate-density SDRAM in a 54-TFBGA (8x8) footprint for space-constrained PCBs.
  • Synchronous SDRAM timing: 166 MHz clock frequency and 5.4 ns access time provide deterministic timing for memory operations.
  • LVTTL interface: Compatibility with LVTTL signaling simplifies integration into systems using that interface standard.
  • Wide operating voltage range: 3.0 V to 3.6 V supply support accommodates common 3 V system rails.
  • Extended ambient temperature: Rated for −40°C to 85°C to meet a broad range of environmental conditions.

Why Choose IS42S16160L-6BLI-TR?

The IS42S16160L-6BLI-TR positions itself as a straightforward, moderate-density SDRAM option from ISSI, offering defined performance parameters (166 MHz clock, 5.4 ns access) and a compact 54-TFBGA package. Its LVTTL interface, 3.0 V–3.6 V supply, and −40°C to 85°C operating range make it appropriate for designs that need predictable synchronous DRAM behavior in space- and power-constrained environments.

This device is well suited to engineers and procurement teams specifying 256 Mbit SDRAM modules for embedded platforms, system buffers, or industrial electronics where the documented electrical and thermal specifications align with project requirements.

Request a quote or contact sales to discuss availability and volume pricing for IS42S16160L-6BLI-TR.

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