IS42S16160J-7TL-TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,942 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S16160J-7TL-TR – IC DRAM 256MBIT PAR 54TSOP II
The IS42S16160J-7TL-TR is a 256 Mbit volatile DRAM device based on SDRAM technology, organized as 16M × 16 bits. It is supplied in a 54-TSOP II package with a parallel memory interface.
Designed for systems requiring parallel SDRAM memory, the device operates up to a 143 MHz clock frequency with an access time of 5.4 ns and supports a supply voltage range of 3.0 V to 3.6 V. Operating ambient temperature is specified from 0°C to 70°C.
Key Features
- Core / Memory 256 Mbit DRAM organized as 16M × 16 bits, providing a standard parallel memory architecture for system memory expansion.
- Technology SDRAM technology supporting synchronous operation at up to 143 MHz clock frequency for timing-determined memory access.
- Performance & Timing Access time specified at 5.4 ns, enabling predictable read/write latency for time-sensitive applications.
- Power Supply voltage range of 3.0 V to 3.6 V to match common 3 V-class system rails.
- Interface & Format Parallel memory interface provided in a DRAM format suitable for systems designed around parallel SDRAM memory.
- Package 54-TSOP II (0.400", 10.16 mm width) package case, supplier device package 54-TSOP II for compact board-level integration.
- Temperature Range Operating ambient temperature (TA) specified from 0°C to 70°C.
Unique Advantages
- 256 Mbit density: Provides a defined memory capacity organized as 16M × 16, simplifying memory mapping and address planning.
- Synchronous operation at 143 MHz: Enables clocked SDRAM operation at the device’s specified maximum clock frequency for deterministic timing.
- Fast access time: 5.4 ns access time supports applications that require low-latency memory transactions.
- Standard 54-TSOP II package: Compact package footprint (10.16 mm width) suitable for dense board layouts.
- 3.0–3.6 V supply range: Compatible with common 3 V-class power rails used in many electronic systems.
- Specified operating temperature: 0°C to 70°C ambient rating for operation within typical commercial temperature environments.
Why Choose IS42S16160J-7TL-TR?
The IS42S16160J-7TL-TR offers a straightforward parallel SDRAM solution with a clear set of electrical and timing specifications: 256 Mbit density (16M × 16), up to 143 MHz clocking, 5.4 ns access time, and a 3.0–3.6 V supply range. Its 54-TSOP II package supports compact board integration while providing a defined commercial temperature range (0°C to 70°C).
This device is suited to designs that require a documented SDRAM memory option with explicit organization, timing, and power requirements. Choosing this part provides predictable memory behavior tied directly to the published specifications.
Request a quote or submit an inquiry to obtain pricing, availability, and further technical details for the IS42S16160J-7TL-TR.