IS42S16160J-7TL

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 742 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160J-7TL – IC DRAM 256MBIT PAR 54TSOP II

The IS42S16160J-7TL is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It operates from a 3.0 V to 3.6 V supply and is offered in a 54‑lead TSOP II package (0.400", 10.16 mm width).

This device is intended for systems requiring parallel DRAM storage with a clock rate up to 143 MHz and an access time of 5.4 ns, and is specified for commercial operation over a 0 °C to 70 °C ambient temperature range.

Key Features

  • Memory Core SDRAM architecture, 256 Mbit capacity organized as 16M × 16 for parallel data paths.
  • Performance Supports a clock frequency of 143 MHz and an access time of 5.4 ns for timing-sensitive memory operations.
  • Power and Voltage Operates from a 3.0 V to 3.6 V supply, matching common 3.3 V system rails.
  • Interface Parallel memory interface suitable for direct connection to parallel memory buses.
  • Package Available in a 54‑lead TSOP II package (0.400", 10.16 mm width) for compact board-level mounting.
  • Operating Range Commercial temperature range: 0 °C to 70 °C (TA).
  • Memory Type Volatile DRAM format for temporary data storage and buffering.

Typical Applications

  • System Memory for Parallel Bus Designs — Provides 256 Mbit of SDRAM capacity for systems that require a parallel memory interface and standard 3.3 V operation.
  • Data Buffering and Frame Storage — Suitable where temporary storage with 143 MHz clocking and 5.4 ns access time meet application timing requirements.
  • Commercial Electronics — Intended for designs operating within a 0 °C to 70 °C ambient range and standard 3.0–3.6 V power rails.

Unique Advantages

  • Direct Parallel Integration: Parallel interface and 16M × 16 organization simplify connection to parallel memory buses and data paths.
  • Defined Performance Metrics: 143 MHz clock frequency and 5.4 ns access time provide clear timing characteristics for system design and validation.
  • Standard 3.3 V Supply Compatibility: 3.0–3.6 V supply range aligns with common 3.3 V system power domains.
  • Compact Packaging: 54‑lead TSOP II package (0.400", 10.16 mm width) enables space-efficient board layouts.
  • Commercial Temperature Rating: Specified 0 °C to 70 °C operation for typical commercial-grade applications.
  • Manufacturer Support: Supplied by ISSI (Integrated Silicon Solution Inc.), with available product documentation for integration and testing.

Why Choose IS42S16160J-7TL?

The IS42S16160J-7TL positions itself as a straightforward 256 Mbit SDRAM option for designs requiring parallel DRAM with documented timing and voltage requirements. Its 16M × 16 organization, 143 MHz clockability, and 5.4 ns access time make it suitable for systems where predictable DRAM performance and a standard 3.0–3.6 V supply are required.

This device is appropriate for engineers and procurement teams targeting compact board-level implementations using a 54‑lead TSOP II footprint and operating within commercial temperature limits, backed by manufacturer documentation from ISSI.

Request a quote or contact sales to obtain pricing, availability, and lead-time information for IS42S16160J-7TL.

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