IS42S16160J-7BLI-TR
| Part Description |
IC DRAM 256MBIT PAR 54TFBGA |
|---|---|
| Quantity | 557 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S16160J-7BLI-TR – IC DRAM 256MBIT PAR 54TFBGA
The IS42S16160J-7BLI-TR is a 256 Mbit volatile SDRAM device organized as 16M × 16 with a parallel memory interface and a 54‑TFBGA (8×8) package. It is specified for operation from 3.0 V to 3.6 V, with a 143 MHz clock frequency and a typical access time of 5.4 ns.
This device targets designs requiring a mid‑density parallel SDRAM option in a compact BGA footprint and supports ambient operating temperatures from −40°C to 85°C.
Key Features
- Memory Architecture 256 Mbit SDRAM organized as 16M × 16, providing a straightforward parallel memory map for systems that require this organization.
- Performance 143 MHz clock frequency and a 5.4 ns access time for predictable read/write timing in systems sized for this performance level.
- Interface Parallel DRAM interface suitable for designs that integrate parallel memory buses and standard SDRAM control signaling.
- Power Supply Operates from 3.0 V to 3.6 V, enabling use with nominal 3.3 V system rails.
- Package 54‑TFBGA (8×8) ball grid array package for compact board footprint and surface‑mount assembly.
- Operating Temperature Specified for ambient temperatures from −40°C to 85°C (TA), supporting a wide range of environmental conditions.
- Volatile Memory Type DRAM (volatile) device—data is retained only while powered.
Typical Applications
- Buffering and Frame Storage Use as parallel SDRAM for buffering data streams or frame storage where a 16M × 16 organization and 256 Mbit capacity are required.
- System Memory Expansion Provide additional volatile memory capacity in systems that use a parallel DRAM interface and require operation at up to 143 MHz.
- Parallel Memory Subsystems Integrate into designs that rely on parallel SDRAM banks and standard SDRAM timing for mid‑density memory needs.
Unique Advantages
- Predictable access performance: 5.4 ns access time combined with a 143 MHz clock frequency supports deterministic memory timing.
- Standard SDRAM organization: 16M × 16 layout simplifies memory mapping and integration into parallel memory architectures.
- Compact BGA footprint: 54‑TFBGA (8×8) package minimizes board area while retaining robust surface‑mount mounting.
- Wide ambient temperature range: −40°C to 85°C (TA) rating supports use across varied temperature conditions.
- 3.0–3.6 V supply range: Compatibility with common 3.3 V system rails simplifies power supply design.
Why Choose IC DRAM 256MBIT PAR 54TFBGA?
The IS42S16160J-7BLI-TR offers a clear specification set for designers needing a 256 Mbit parallel SDRAM in a compact 54‑TFBGA package. Its 16M × 16 organization, 143 MHz clocking, and 5.4 ns access time provide a balanced combination of density and performance for systems designed around parallel SDRAM architectures.
This device is suited to projects that require standardized SDRAM behavior, a 3.0–3.6 V supply domain, and operation across −40°C to 85°C ambient. Its form factor and electrical characteristics make it a practical choice for engineers implementing mid‑density volatile memory into board‑level designs.
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