IS42S16160J-7BLI-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 557 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160J-7BLI-TR – IC DRAM 256MBIT PAR 54TFBGA

The IS42S16160J-7BLI-TR is a 256 Mbit volatile SDRAM device organized as 16M × 16 with a parallel memory interface and a 54‑TFBGA (8×8) package. It is specified for operation from 3.0 V to 3.6 V, with a 143 MHz clock frequency and a typical access time of 5.4 ns.

This device targets designs requiring a mid‑density parallel SDRAM option in a compact BGA footprint and supports ambient operating temperatures from −40°C to 85°C.

Key Features

  • Memory Architecture 256 Mbit SDRAM organized as 16M × 16, providing a straightforward parallel memory map for systems that require this organization.
  • Performance 143 MHz clock frequency and a 5.4 ns access time for predictable read/write timing in systems sized for this performance level.
  • Interface Parallel DRAM interface suitable for designs that integrate parallel memory buses and standard SDRAM control signaling.
  • Power Supply Operates from 3.0 V to 3.6 V, enabling use with nominal 3.3 V system rails.
  • Package 54‑TFBGA (8×8) ball grid array package for compact board footprint and surface‑mount assembly.
  • Operating Temperature Specified for ambient temperatures from −40°C to 85°C (TA), supporting a wide range of environmental conditions.
  • Volatile Memory Type DRAM (volatile) device—data is retained only while powered.

Typical Applications

  • Buffering and Frame Storage Use as parallel SDRAM for buffering data streams or frame storage where a 16M × 16 organization and 256 Mbit capacity are required.
  • System Memory Expansion Provide additional volatile memory capacity in systems that use a parallel DRAM interface and require operation at up to 143 MHz.
  • Parallel Memory Subsystems Integrate into designs that rely on parallel SDRAM banks and standard SDRAM timing for mid‑density memory needs.

Unique Advantages

  • Predictable access performance: 5.4 ns access time combined with a 143 MHz clock frequency supports deterministic memory timing.
  • Standard SDRAM organization: 16M × 16 layout simplifies memory mapping and integration into parallel memory architectures.
  • Compact BGA footprint: 54‑TFBGA (8×8) package minimizes board area while retaining robust surface‑mount mounting.
  • Wide ambient temperature range: −40°C to 85°C (TA) rating supports use across varied temperature conditions.
  • 3.0–3.6 V supply range: Compatibility with common 3.3 V system rails simplifies power supply design.

Why Choose IC DRAM 256MBIT PAR 54TFBGA?

The IS42S16160J-7BLI-TR offers a clear specification set for designers needing a 256 Mbit parallel SDRAM in a compact 54‑TFBGA package. Its 16M × 16 organization, 143 MHz clocking, and 5.4 ns access time provide a balanced combination of density and performance for systems designed around parallel SDRAM architectures.

This device is suited to projects that require standardized SDRAM behavior, a 3.0–3.6 V supply domain, and operation across −40°C to 85°C ambient. Its form factor and electrical characteristics make it a practical choice for engineers implementing mid‑density volatile memory into board‑level designs.

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