IS42S16160J-7BL

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 466 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160J-7BL – IC DRAM 256MBIT PAR 54TFBGA

The IS42S16160J-7BL is a 256 Mbit SDRAM device organized as 16M × 16 with a parallel memory interface. It implements volatile DRAM architecture in a compact 54-TFBGA (8×8) package and is specified for operation at a supply voltage range of 3.0 V to 3.6 V.

Designed for applications requiring parallel SDRAM memory, this device delivers defined timing and electrical characteristics including a 143 MHz clock frequency and a 5.4 ns access time, with an operating ambient temperature range of 0°C to 70°C.

Key Features

  • Memory Type & Capacity Volatile DRAM technology with a total memory size of 256 Mbit organized as 16M × 16.
  • Memory Technology SDRAM architecture optimized for parallel memory interfacing.
  • Interface & Organization Parallel memory interface suitable for systems that require a 16-bit wide data organization.
  • Performance Specified clock frequency of 143 MHz and an access time of 5.4 ns for predictable timing behavior.
  • Voltage Supply Operates from 3.0 V to 3.6 V to match common 3V-class system supplies.
  • Package & Mounting 54-TFBGA package (8×8) for surface-mount assembly and compact board footprint.
  • Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
  • Manufacturer Produced by ISSI (Integrated Silicon Solution Inc).

Typical Applications

  • Embedded memory subsystems — Provides 256 Mbit of parallel SDRAM capacity for designs that require external volatile memory.
  • Board-level memory expansion — Compact 54-TFBGA package allows integration where PCB space is constrained.
  • Timing-critical systems — 143 MHz clock frequency and 5.4 ns access time support applications with defined timing requirements.

Unique Advantages

  • Compact package footprint: The 54-TFBGA (8×8) package enables high-density placement on modern PCBs.
  • Clear electrical window: Defined supply range of 3.0 V to 3.6 V simplifies power supply selection and design margins.
  • Predictable timing characteristics: 143 MHz clock rating and 5.4 ns access time provide deterministic memory access metrics.
  • Wide ambient operating range: Specified operation from 0°C to 70°C supports standard commercial temperature deployments.
  • Standard parallel organization: 16M × 16 memory organization matches common 16-bit parallel memory controller interfaces.

Why Choose IS42S16160J-7BL?

The IS42S16160J-7BL offers a straightforward SDRAM solution when a 256 Mbit parallel DRAM in a compact BGA package is required. Its specified clock frequency, access time, voltage range, and temperature rating provide measurable parameters for system design and qualification.

This device is suitable for designers and procurement teams specifying external DRAM where compact package, defined electrical characteristics, and a 16-bit data organization are primary requirements.

If you need pricing, availability, or technical ordering information for IS42S16160J-7BL, request a quote or submit an inquiry to receive further assistance and a formal quotation.

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