IS42S16160J-6TL
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 385 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S16160J-6TL – IC DRAM 256MBIT PAR 54TSOP II
The IS42S16160J-6TL is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with a parallel memory interface. It delivers externally accessible volatile memory targeted at designs that require a moderate-density SDRAM solution in a compact 54-TSOP II package.
Key attributes include a 166 MHz clock capability, a 5.4 ns access time, and a 3.0 V to 3.6 V supply range, making it suitable for systems where defined timing, standard supply levels, and space-efficient packaging are primary requirements.
Key Features
- Memory Architecture SDRAM technology organized as 16M × 16, providing a total memory capacity of 256 Mbit in a parallel memory format.
- Density and Format 256 Mbit DRAM configured for parallel access, suitable for external system memory implementations.
- Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns for deterministic read/write timing.
- Power Supply Operates from a 3.0 V to 3.6 V supply range, matching common 3 V-class system rails.
- Package Available in a 54-TSOP II package (0.400", 10.16 mm width), enabling compact board-level integration.
- Temperature Range Specified for operation from 0 °C to 70 °C (TA), suitable for standard commercial-temperature environments.
- Volatile Memory DRAM (volatile) storage for temporary data buffering and working memory in digital systems.
- Manufacturer Supplied by Integrated Silicon Solution Inc. (ISSI), identifying the device source and part family.
Typical Applications
- External System Memory Used as parallel SDRAM for systems that require 256 Mbit of volatile memory and defined timing parameters.
- Embedded Devices Provides working memory for embedded controllers and processors that support parallel SDRAM interfaces.
- Consumer Electronics Serves as board-level DRAM for consumer products where a compact 54-TSOP II footprint and 3 V-class supply are required.
Unique Advantages
- Compact, industry-standard package: 54-TSOP II (0.400", 10.16 mm) enables space-efficient placement on crowded PCBs.
- Defined timing performance: 166 MHz clock capability and 5.4 ns access time provide predictable memory latency for system designers.
- Convenient supply range: 3.0 V–3.6 V operation aligns with common 3 V system power rails, simplifying power design.
- Moderate-density solution: 256 Mbit capacity (16M × 16) offers a balance between capacity and board area for many external memory needs.
- Commercial temperature rating: 0 °C–70 °C specification supports standard-temperature deployments without additional qualification data.
- Manufacturer-backed part: Produced by Integrated Silicon Solution Inc., providing traceability to a recognized memory supplier.
Why Choose IS42S16160J-6TL?
The IS42S16160J-6TL positions itself as a straightforward, mid-density SDRAM option for designs that require a parallel 16-bit memory interface, clear timing characteristics, and a compact TSOP footprint. Its combination of 256 Mbit capacity, 166 MHz clock support, and 3.0 V–3.6 V supply makes it appropriate for systems where predictable volatile storage and board-level space constraints are considerations.
Backed by Integrated Silicon Solution Inc., this device is suited for engineers and procurement teams specifying external SDRAM in commercial-temperature applications that need an established memory form factor and defined electrical/timing parameters.
To request a quote or submit an inquiry for IS42S16160J-6TL, please contact sales or request a formal pricing and availability proposal.