IS42S16160J-6BL-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 153 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S16160J-6BL-TR – IC DRAM 256Mbit Parallel 54-TFBGA

The IS42S16160J-6BL-TR is a volatile SDRAM device offering 256 Mbit of parallel DRAM organized as 16M × 16. It delivers a 166 MHz clock frequency with an access time of 5.4 ns, intended for board-level memory implementations that require standard parallel SDRAM functionality.

Packaged in a 54‑TFBGA (8×8) and supplied by Integrated Silicon Solution Inc (ISSI), the device operates from 3.0 V to 3.6 V and is specified for an ambient operating temperature range of 0°C to 70°C (TA).

Key Features

  • Memory Architecture 256 Mbit capacity arranged as 16M × 16 provides a standard parallel DRAM organization for systems requiring medium-density volatile storage.
  • SDRAM Technology Synchronous DRAM operation with a clock frequency rating of 166 MHz and a typical access time of 5.4 ns for predictable timing in synchronous designs.
  • Power Supply Single-supply operation across 3.0 V to 3.6 V supports common 3.3 V system rails.
  • Package 54‑TFBGA (8×8) package format suitable for compact board-level integration.
  • Interface Parallel memory interface compatible with parallel DRAM bus architectures.
  • Operating Range Rated for ambient temperatures from 0°C to 70°C (TA), matching standard commercial temperature requirements.

Typical Applications

  • Parallel memory subsystems — Provides 16M × 16 organized SDRAM capacity for systems that use parallel DRAM buses.
  • Board-level DRAM implementations — Compact 54‑TFBGA package for integration on populated PCBs where a 256 Mbit volatile memory is required.
  • Embedded systems — Serves as on-board volatile storage in designs operating within a 3.0 V–3.6 V supply and 0°C–70°C ambient range.

Unique Advantages

  • Medium-density capacity: 256 Mbit organized as 16M × 16 provides a balance of storage density and bus width for parallel DRAM designs.
  • Synchronous performance: 166 MHz clock rating and 5.4 ns access time allow predictable timing behavior in synchronous memory architectures.
  • Standard 3.3 V supply compatibility: Operates from 3.0 V to 3.6 V to match common 3.3 V system rails and simplify power domain design.
  • Compact package: 54‑TFBGA (8×8) reduces board area compared with larger packages while supporting required I/O density for a 16‑bit wide memory interface.
  • Commercial temperature rating: Specified for 0°C to 70°C ambient operation to suit standard commercial applications.
  • Manufacturer pedigree: Produced by Integrated Silicon Solution Inc (ISSI), providing a recognized vendor source for SDRAM devices.

Why Choose IS42S16160J-6BL-TR?

The IS42S16160J-6BL-TR positions itself as a straightforward SDRAM building block for systems requiring 256 Mbit of parallel volatile memory with a 16M × 16 organization. Its synchronous operation (166 MHz) and 5.4 ns access time provide deterministic timing for designs that rely on standard parallel DRAM interfaces.

With single-supply operation (3.0 V–3.6 V), a compact 54‑TFBGA package, and a commercial operating temperature range, this device is suitable for engineers and procurement teams targeting reliable board-level memory integration from a known manufacturer.

Request a quote or contact sales for pricing, lead times, and availability for the IS42S16160J-6BL-TR.

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