IS42S16160G-7TL-TR

The IS42S16160G-7TL-TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface and a 54‑pin TSOP II package. It uses a pipelined, fully synchronous architecture with an internal bank structure to support high‑speed data transfers in designs that require parallel SDRAM.

Typical deployment is in systems that need high‑density, parallel SDRAM memory with programmable burst and timing options; the device offers single‑supply operation and commercial temperature range support for board‑level memory expansion.

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with a 4‑bank internal architecture for efficient row access and precharge handling.
• Performance  Supports up to 143 MHz clock (‑7 speed grade) with access time of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave) for flexible data transfer patterns.
• Refresh and Self‑Refresh  Auto Refresh and Self Refresh supported; 8K refresh cycles supported with timing options of 32 ms or 64 ms depending on grade.
• Interface and I/O  LVTTL compatible interface with fully synchronous inputs and outputs referenced to the rising clock edge.
• Power  Single power supply operation: 3.0 V to 3.6 V (3.3 V ±0.3 V).
• Package and Mounting  54‑pin TSOP II (0.400", 10.16 mm width) surface‑mount package for board‑level integration.
• Operating Temperature  Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• Embedded Systems  Provides 256 Mbit of parallel SDRAM for embedded platforms requiring synchronous, pipelined memory.
• Board‑Level Memory Expansion  Fits designs needing a high‑density TSOP II footprint for adding parallel DRAM capacity.
• Legacy Parallel SDRAM Interfaces  Suitable where a parallel SDRAM device with programmable burst and CAS timing is required.

Unique Advantages

• High‑density memory in a compact package: 256 Mbit capacity in a 54‑pin TSOP II enables significant memory without large board area impact.
• Flexible timing and burst control: Programmable CAS latency and multiple burst lengths support tuning for different system throughput and latency needs.
• Synchronous pipelined architecture: All signals referenced to the clock edge and internal bank structure help optimize continuous data transfers.
• Single‑supply operation: 3.0–3.6 V supply range (3.3 V nominal) simplifies power rail requirements in common system designs.
• Standard surface‑mount footprint: 54‑pin TSOP II simplifies placement and routing on board assemblies designed for TSOP memory.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S16160G-7TL-TR combines a 256 Mbit SDRAM density with a fully synchronous, pipelined architecture and flexible timing/burst options suitable for systems requiring parallel SDRAM memory. Its single 3.3 V supply range, LVTTL interface, and 54‑pin TSOP II package make it appropriate for board‑level memory additions where a compact footprint and predictable timing are required.

This device is well suited to designers and procurement teams looking for a tested parallel SDRAM component with commercial temperature support, programmable latency and burst control, and a standard surface‑mount package for straightforward integration.

Request a quote or submit an inquiry to receive pricing and availability for the IS42S16160G-7TL-TR and to discuss lead times or volume options.