IS42S16160G-7BLI-TR

The IS42S16160G-7BLI-TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with all inputs and outputs referenced to the rising edge of the clock to support high-speed data transfer.

Featuring a 54-ball TFBGA (8×8) package, a 3.0 V–3.6 V supply range, and an extended operating temperature of –40°C to +85°C (TA), this device is specified for designs that require deterministic, burst-oriented SDRAM operation with programmable timing and refresh modes.

Key Features

• Memory Core: 256 Mbit capacity organized as 16M × 16 with 4 internal banks for improved row access and precharge management.
• Performance: Speed grade -7 supports a clock frequency up to 143 MHz with an access time from clock of 5.4 ns (CAS latency options 2 or 3).
• Burst and Sequencing: Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Power Modes: Supports Auto Refresh (CBR) and Self Refresh; refresh rate options include 8K cycles per 32 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) as specified in the datasheet.
• Interface and Logic Levels: LVTTL-compatible interface with random column address capability every clock cycle for continuous column access.
• Supply and Package: Single-supply operation at 3.3 V ±0.3 V (3.0 V–3.6 V), supplied in a 54-ball TFBGA (8×8) package for compact board integration.
• Operating Temperature: −40°C to +85°C (TA) as specified in the product data.

Unique Advantages

• Deterministic synchronous operation: All I/O referenced to the rising clock edge supports predictable timing for pipelined data transfers.
• Configurable latency and burst behavior: Programmable CAS latency (2 or 3 clocks) and multiple burst length/sequence options let designers match memory timing to system throughput needs.
• Integrated bank architecture: Four internal banks help hide row access and precharge, improving effective throughput for burst accesses.
• Flexible refresh modes: Auto and self-refresh support and selectable refresh intervals (8K cycles per 32 ms or 64 ms depending on grade) provide options for power and retention management.
• Compact system footprint: 54-ball TFBGA (8×8) packaging enables high-density board layouts while maintaining standard parallel SDRAM connectivity.
• Wide supply and temperature range: 3.0 V–3.6 V supply tolerance and −40°C to +85°C operating range provide tolerance for a range of system power and thermal conditions.

Why Choose IS42S16160G-7BLI-TR?

The IS42S16160G-7BLI-TR delivers synchronous, pipelined DRAM performance with programmable burst and latency options to align memory behavior with system timing requirements. Its 16M × 16 organization, LVTTL interface, and 54-ball TFBGA package make it suitable where parallel SDRAM connectivity, compact packaging, and deterministic timing are required.

With selectable refresh modes, standard 3.3 V supply compatibility, and an extended −40°C to +85°C operating range, this device provides a balanced combination of performance, configurability, and environmental robustness for designs relying on 256 Mbit SDRAM capacity.

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