IS42S16160G-7TL

The IS42S16160G-7TL is a 256Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with internal bank management and LVTTL signaling, delivering predictable, clock-referenced memory transfers for embedded and system designs.

Designed for systems requiring high-speed parallel DRAM, the device supports programmable burst modes, selectable CAS latencies, and standard SDRAM refresh mechanisms to balance performance and power across a 3.0–3.6 V supply and a 0 °C to 70 °C operating range.

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to support overlapped row access and precharge.
• Performance  Clock frequency up to 143 MHz (–7 speed grade) with access time of 5.4 ns for CAS latency = 3.
• Fully Synchronous Operation  All inputs and outputs are referenced to the rising edge of the clock for deterministic timing and pipeline operation.
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable 2 or 3 clocks.
• Refresh and Self-Refresh  Supports Auto Refresh (CBR) and Self Refresh. Refresh rates: 8K cycles per 32 ms (A2 grade) or 64 ms (commercial/A1/industrial grades) as specified in the device options.
• Interface and Signaling  Parallel memory interface with LVTTL-compatible signaling and support for random column addressing every clock cycle.
• Power  Single power supply operation: 3.3 V ±0.3 V (specified supply range 3.0 V to 3.6 V).
• Package and Temperature  Available in a 54-pin TSOP-II package (0.400" / 10.16 mm width); specified commercial operating temperature range 0 °C to 70 °C for this part number.

Unique Advantages

• Deterministic, clocked interface: Fully synchronous, edge-referenced operation simplifies timing analysis and integration into clocked memory systems.
• Flexible burst control: Programmable burst lengths and sequences enable designers to tune transfer patterns for system memory access needs.
• Bank architecture for throughput: Internal bank management hides row access/precharge latency, improving effective data throughput for burst operations.
• Standard supply and signaling: Operates from a 3.3 V class supply with LVTTL signaling to match common system interfaces and power domains.
• Compact package: 54‑pin TSOP‑II footprint provides a space-efficient form factor for board-level integration where parallel SDRAM is required.

Why Choose IS42S16160G-7TL?

The IS42S16160G-7TL provides a straightforward, fully synchronous 256Mbit SDRAM solution for designs that require parallel SDRAM with programmable burst behavior and selectable CAS latency. Its combination of pipeline architecture, internal bank handling, and LVTTL interface makes it suitable for systems that need clocked, predictable memory transfers within a 3.0–3.6 V power envelope and commercial temperature range.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM in constrained footprints (54‑TSOP II) who require configurable burst and refresh behaviors tied directly to documented timing parameters such as 143 MHz clock operation and 5.4 ns access times (–7 speed grade).

Request a quote or submit a pricing inquiry to obtain availability and volume pricing for the IS42S16160G-7TL.