IS42S16160G-7BL-TR

The IS42S16160G-7BL-TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54-ball TFBGA (8×8) package. The device implements a pipelined architecture with fully synchronous operation referenced to the rising edge of the clock.

Designed for systems that require a 256 Mbit SDRAM with programmable burst modes, selectable CAS latency and standard 3.3 V power, the device provides selectable timing and refresh options to match a variety of synchronous memory subsystems within the commercial 0°C to +70°C temperature range.

Key Features

• Memory Core  The device is organized as 16M × 16 (256 Mbit) SDRAM with internal bank architecture (4 banks) for row access/precharge hiding.
• Timing & Performance  Supports clock frequencies up to 143 MHz for the -7 timing option and access times of 5.4 ns from clock; programmable CAS latency of 2 or 3 clocks.
• Burst Control  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh & Self-Maintenance  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles specified with 32 ms (A2) or 64 ms (commercial/A1/industrial) options as defined in the datasheet.
• Interface & Signaling  LVTTL-compatible interface with all signals referenced to the positive clock edge for synchronous operation.
• Power  Single power supply operation at 3.3 V nominal (3.0 V to 3.6 V supply range).
• Package & Temperature  54-ball TFBGA (8×8) package; commercial operating temperature 0°C to +70°C (TA) as specified.

Typical Applications

• Synchronous DRAM memory subsystems  For system designs that require a 256 Mbit parallel SDRAM with programmable burst and CAS timing.
• Board-level embedded designs  Fits applications that require a 54-ball TFBGA (8×8) footprint and 3.3 V supply within a 0°C to +70°C operating range.
• Buffered data storage and refresh management  Suited to designs leveraging Auto Refresh and Self Refresh with internal bank architecture for efficient row management.

Unique Advantages

• Flexible timing configuration: Programmable CAS latency (2 or 3 clocks) and multiple burst lengths enable matching to system timing and throughput needs.
• Synchronous, pipelined architecture: All I/O referenced to the positive clock edge and pipeline operation support predictable, clocked transfers.
• Verified refresh options: Auto Refresh and Self Refresh modes with 8K refresh cycles specified for either 32 ms or 64 ms intervals provide selectable retention characteristics.
• Standard 3.3 V supply: Operates across a 3.0 V to 3.6 V range to align with common 3.3 V system rails.
• Compact BGA footprint: 54-ball TFBGA (8×8) package provides a board-space-efficient option for high-density memory placement.

Why Choose IS42S16160G-7BL-TR?

The IS42S16160G-7BL-TR offers a straightforward 256 Mbit synchronous DRAM solution with selectable timing, programmable burst modes and refresh control—features that help align memory behavior with host system requirements. Its 16M × 16 organisation, LVTTL interface and 54-ball TFBGA packaging make it suitable for designs needing a compact, parallel SDRAM device operating from a 3.3 V supply.

This device is well suited to engineers and procurement teams specifying a 256 Mbit SDRAM for systems that require defined timing options, refresh modes and a commercial temperature rating. The combination of synchronous operation, internal bank architecture and standard supply voltage supports scalable integration into existing memory subsystems.

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