IS42S16160G-7BI
| Part Description |
IC DRAM 256MBIT PAR 54TFBGA |
|---|---|
| Quantity | 541 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S16160G-7BI – 256 Mbit SDRAM, 54-TFBGA
The IS42S16160G-7BI is a 256 Mbit volatile DRAM device implemented in SDRAM architecture with a parallel memory interface. It provides a 16M × 16 memory organization in a 54-TFBGA (8×8) package.
This device is intended for designs that require parallel SDRAM memory with a defined clock frequency and access time while operating within a 3.0 V to 3.6 V supply and an operating temperature range of -40°C to 85°C (TA).
Key Features
- Core / Memory SDRAM architecture with a total memory size of 256 Mbit arranged as 16M × 16.
- Performance Specified clock frequency of 143 MHz and an access time of 5.4 ns for timing-sensitive designs.
- Interface Parallel memory interface for systems designed around parallel DRAM connectivity.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package 54-TFBGA package (8×8) providing a BGA footprint for surface-mount assembly.
- Temperature Range Rated for operation from -40°C to 85°C (TA).
- Memory Type Volatile DRAM memory format.
Typical Applications
- Parallel memory subsystems — Provides 256 Mbit of SDRAM in a parallel interface for systems requiring synchronous DRAM.
- Board-level SMD implementations — 54-TFBGA (8×8) package suited to surface-mount assembly where a BGA footprint is specified.
- Temperature-sensitive deployments — Operates across -40°C to 85°C for designs with wide ambient temperature requirements.
Unique Advantages
- Defined memory density: 256 Mbit capacity arranged as 16M × 16 for straightforward memory budgeting in system designs.
- SDRAM timing: 143 MHz clocking with 5.4 ns access time provides explicit timing parameters for system integration and timing analysis.
- Standard voltage range: 3.0 V to 3.6 V supply compatibility with common 3 V system rails.
- BGA package option: 54-TFBGA (8×8) supplier device package for board designs that specify a TFBGA form factor.
- Wide operating temperature: -40°C to 85°C rating to match designs requiring extended ambient temperature operation.
Why Choose IC DRAM 256MBIT PAR 54TFBGA?
The IC DRAM 256MBIT PAR 54TFBGA (IS42S16160G-7BI) positions itself as a straightforward SDRAM building block offering explicit electrical and timing specifications—256 Mbit density, 16M × 16 organization, 143 MHz clock frequency, and 5.4 ns access time—packed in a 54-TFBGA (8×8) package. These defined parameters simplify selection and integration for designs that require parallel SDRAM with known timing and thermal limits.
This device is suitable for engineers and procurement teams specifying parallel DRAM memory where clear supply voltage, package, and operating temperature requirements must be met. Its documented specifications support predictable system-level timing and power planning throughout product development and deployment.
To request a quote or submit a pricing and availability inquiry for the IS42S16160G-7BI, please contact sales or request a formal quote through your usual procurement channel.
