IS42S16160G-6TL

The IS42S16160G-6TL is a 256 Mbit synchronous DRAM organized as 16M × 16, implemented with pipeline architecture and fully synchronous operation referenced to a positive clock edge. It delivers parallel SDRAM performance with programmable burst and latency options suitable for systems requiring deterministic, high-speed parallel memory access.

Manufactured by Integrated Silicon Solution, Inc., this device supports single 3.3 V supply operation and is offered in a 54-pin TSOP II package for compact board-level integration.

Key Features

• Core / Memory  256 Mbit SDRAM organized as 16M × 16 with 4 internal banks for efficient row/column access and memory banking.
• Performance  Clock frequency up to 166 MHz for the -6 speed grade with an access time from clock of 5.4 ns (CAS latency options 2 or 3).
• Burst & Latency Control  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave) with selectable CAS latency (2 or 3 clocks).
• Refresh and Self-Maintenance  Supports Auto Refresh (CBR) and Self Refresh with 8K refresh cycles (A2 grade 32 ms; commercial/industrial/A1 grade 64 ms as specified in device options).
• Interface  Parallel memory interface with LVTTL-compatible signaling; fully synchronous I/O referenced to the rising edge of the clock.
• Power  Single power supply operation at 3.3 V ±0.3 V (specified range 3.0 V to 3.6 V).
• Package & Temperature  54-pin TSOP II package (0.400", 10.16 mm width); commercial operating temperature range 0°C to +70°C.

Typical Applications

• Embedded memory modules  Used as a 256 Mbit synchronous parallel DRAM component where organized 16M × 16 memory and programmable burst control are required.
• Buffer and frame storage  Employed in systems needing predictable, clock-synchronous reads and writes with selectable CAS latency and burst lengths.
• System memory expansion  Integrated into designs that require a compact 54-pin TSOP II footprint with single 3.3 V supply and self-refresh capability.

Unique Advantages

• Synchronous pipeline architecture: Fully synchronous operation referenced to clock edges ensures predictable timing for high-speed parallel transfers.
• Flexible burst and latency configuration: Programmable burst lengths and CAS latency options allow tuning for varied access patterns and system timing requirements.
• Internal banking for performance: Four internal banks help hide row access/precharge latency and improve effective throughput for interleaved access.
• Robust refresh options: Auto Refresh and Self Refresh modes with defined 8K refresh cycles provide reliable data retention management.
• Standard 3.3 V supply compatibility: Operates at a single 3.3 V supply (3.0 V–3.6 V range), simplifying power rail design in existing 3.3 V systems.
• Compact TSOP II footprint: 54-pin TSOP II package supports space-constrained board layouts while providing the necessary parallel interface pins.

Why Choose IS42S16160G-6TL?

The IS42S16160G-6TL combines synchronous SDRAM performance, flexible burst and latency control, and a compact 54-pin TSOP II package to address applications that require deterministic parallel memory access at up to 166 MHz. Its internal banking, refresh modes, and LVTTL-compatible interface make it suitable for designs that need predictable timing and reliable data retention.

Manufactured by Integrated Silicon Solution, Inc. and documented with a detailed device specification, the IS42S16160G-6TL is appropriate for engineers and procurement teams integrating 256 Mbit parallel SDRAM into embedded systems, buffer memories, and compact memory modules.

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