IS42S16160G-6BLI-TR

The IS42S16160G-6BLI-TR is a 256Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface and a 54‑ball TFBGA (8×8) package. It implements a pipelined, fully synchronous architecture to support predictable, high‑speed data transfers.

Engineered for systems that require parallel SDRAM memory with programmable burst control and self‑refresh capability, this device targets designs needing a 3.3V supply range and operation across industrial temperature conditions.

Key Features

• Memory Architecture  256Mbit capacity organized as 16M × 16 with internal banks for efficient row access and precharge management.
• SDRAM Core  Fully synchronous operation with all inputs and outputs referenced to the rising clock edge; pipeline architecture for high‑speed transfers.
• Performance  Rated for a 166 MHz clock frequency (‑6 speed grade) with a typical access time of 5.4 ns and programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data block transfers.
• Refresh and Low‑Power Modes  Supports Auto Refresh and Self Refresh; refresh options include 8K refresh cycles per 32 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) as specified in the device datasheet.
• Interface and Signaling  LVTTL signaling with a parallel memory interface suitable for standard SDRAM system integrations.
• Power  Single supply operation at 3.3 V ±0.3 V (specified voltage range 3.0 V to 3.6 V).
• Package and Temperature  54‑TFBGA (8×8) package; specified operating temperature range of −40°C to +85°C (TA).

Typical Applications

• Parallel SDRAM memory subsystems  Acts as a 256Mbit parallel SDRAM component for systems requiring 16‑bit wide data paths and banked memory organization.
• High‑speed data buffering  Pipeline architecture and programmable burst modes support burst read/write patterns for transient data buffering.
• Industrial electronics  Specified operation from −40°C to +85°C suits industrial designs needing stable memory performance across wide ambient temperatures.

Unique Advantages

• Predictable synchronous timing: Fully synchronous design with CL=2 or 3 and defined access times (5.4 ns) simplifies timing analysis and system integration.
• Flexible burst control: Programmable burst lengths and sequence modes enable optimized throughput for varied access patterns.
• Robust refresh options: Auto and self refresh plus selectable refresh intervals provide adaptability for power/refresh tradeoffs across device grades.
• Standard 3.3V compatibility: Operates within a 3.0–3.6 V supply range (3.3 V ±0.3 V), matching common SDRAM power rails.
• Compact BGA package: 54‑TFBGA (8×8) offers a space‑efficient footprint for board designs that need dense memory packaging.

Why Choose IS42S16160G-6BLI-TR?

The IS42S16160G-6BLI-TR delivers a compact 256Mbit parallel SDRAM solution with synchronous, pipelined architecture, programmable burst functionality, and defined timing characteristics for reliable high‑speed operation. Its 16M × 16 organization, LVTTL interface, and support for Auto/Self Refresh make it suitable for designs that require predictable memory behavior under industrial temperature conditions.

Choose this device for designs that prioritize deterministic SDRAM timing, flexible burst control, and a 3.3V supply compatibility in a small 54‑ball TFBGA package. The included refresh and low‑power features also support longer system uptime and adaptable power management strategies.

If you need pricing, availability, or lead‑time information for the IS42S16160G-6BLI-TR, request a quote or submit an inquiry to receive detailed sales and ordering assistance.