IS42S16160G-6TI-TR

The IS42S16160G-6TI-TR is a 256 Mbit volatile SDRAM organized as 16M × 16, offered in a 54-TSOP II package. Designed as parallel DRAM, it delivers targeted memory capacity and timing characteristics for embedded and system applications that require synchronous DRAM functionality.

Key attributes include a 166 MHz clock frequency capability, 5.4 ns access time, and a 3.0–3.6 V supply range, making this device appropriate for designs needing mid-density, fast-access parallel SDRAM in a compact TSOP form factor.

Key Features

• Memory Core 256 Mbit SDRAM organized as 16M × 16 for byte-wide or word-wide system integration.
• Performance Supports a 166 MHz clock frequency with a 5.4 ns access time, providing predictable synchronous DRAM timing for system memory operations.
• Interface Parallel memory interface suitable for systems designed around conventional SDRAM bus architectures.
• Power Operates from a 3.0 V to 3.6 V supply range, aligning with common 3 V-class system power rails.
• Package 54-TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level mounting and standard TSOP handling.
• Operating Temperature Rated for −40 °C to 85 °C (TA), supporting a wide ambient temperature range for many industrial and embedded environments.

Typical Applications

• Embedded systems — Provides synchronous parallel DRAM storage for microcontroller- or processor-based platforms that require mid-density volatile memory.
• Consumer electronics — Can be used as main or auxiliary SDRAM in devices where a 16-bit memory organization and TSOP packaging meet board-space and interface requirements.
• Industrial equipment — Suited for systems operating across −40 °C to 85 °C that need reliable SDRAM behavior within the specified voltage range.

Unique Advantages

• Balanced density and bus width — 256 Mbit organized as 16M × 16 provides a straightforward match for 16-bit bus designs without complex packing.
• Deterministic timing — 5.4 ns access time and support for 166 MHz clocking offer predictable performance for time-sensitive memory transactions.
• Standard TSOP II package — 54-TSOP II (10.16 mm width) simplifies PCB layout and mechanical design for compact systems.
• Wide ambient tolerance — −40 °C to 85 °C operating range supports deployment in varied environmental conditions.
• 3 V-class compatibility — 3.0–3.6 V supply range fits common system power rails, easing integration into existing power architectures.
• Manufacturer-backed device — Offered by Integrated Silicon Solution Inc (ISSI), providing a commercial supplier source for production designs.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S16160G-6TI-TR positions itself where compact board-level integration and predictable SDRAM timing are required. With a 16M × 16 organization, 166 MHz clock capability, and 5.4 ns access time, it is well suited to designs that need mid-density parallel SDRAM with clear electrical and thermal envelopes.

This device is appropriate for engineers building embedded, consumer, or industrial systems that require a 256 Mbit DRAM solution in a 54-TSOP II package and operating across a −40 °C to 85 °C ambient range. The combination of supply voltage compatibility and standard packaging supports straightforward integration and long-term production use.

Request a quote or submit your specifications to receive pricing and availability for IS42S16160G-6TI-TR from the manufacturer or authorized distributors.